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Results: 1-21 |
Results: 21
RFICS FOR MOBILE COMMUNICATION-SYSTEMS USING SIGE BIPOLAR TECHNOLOGY
Authors: GOTZFRIED R BEISSWANGER F GERLACH S SCHUPPEN A DIETRICH H SEILER U BACH KH ALBERS J
Citation: R. Gotzfried et al., RFICS FOR MOBILE COMMUNICATION-SYSTEMS USING SIGE BIPOLAR TECHNOLOGY, IEEE transactions on microwave theory and techniques, 46(5), 1998, pp. 661-668
INVESTIGATION OF MICROSTRIP AND COPLANAR TRANSMISSION-LINES ON LOSSY SILICON SUBSTRATES WITHOUT BACKSIDE METALLIZATION
Authors: DURR W ERBEN U SCHUPPEN A DIETRICH H SCHUMACHER H
Citation: W. Durr et al., INVESTIGATION OF MICROSTRIP AND COPLANAR TRANSMISSION-LINES ON LOSSY SILICON SUBSTRATES WITHOUT BACKSIDE METALLIZATION, IEEE transactions on microwave theory and techniques, 46(5), 1998, pp. 712-715
LOW-POWER LOW-NOISE ACTIVE MIXERS FOR 5.7 AND 11.2 GHZ USING COMMERCIALLY AVAILABLE SIGE HBT MMIC TECHNOLOGY
Authors: DURR W ERBEN U SCHUPPEN A DIETRICH H SCHUMACHER H
Citation: W. Durr et al., LOW-POWER LOW-NOISE ACTIVE MIXERS FOR 5.7 AND 11.2 GHZ USING COMMERCIALLY AVAILABLE SIGE HBT MMIC TECHNOLOGY, Electronics Letters, 34(21), 1998, pp. 1994-1996
APPLICATION OF SIGE HETEROJUNCTION BIPOLAR-TRANSISTORS IN 5.8 AND 10GHZ LOW-NOISE AMPLIFIERS
Authors: ERBEN U SCHUMACHER H SCHUPPEN A ARNDT J
Citation: U. Erben et al., APPLICATION OF SIGE HETEROJUNCTION BIPOLAR-TRANSISTORS IN 5.8 AND 10GHZ LOW-NOISE AMPLIFIERS, Electronics Letters, 34(15), 1998, pp. 1498-1500
RECENT ADVANCES WITH SIGE HETEROJUNCTION BIPOLAR-TRANSISTORS
Authors: GRUHLE A SCHUPPEN A
Citation: A. Gruhle et A. Schuppen, RECENT ADVANCES WITH SIGE HETEROJUNCTION BIPOLAR-TRANSISTORS, Thin solid films, 294(1-2), 1997, pp. 246-249
1-W SIGE POWER HBTS FOR MOBILE COMMUNICATION
Authors: SCHUPPEN A GERLACH S DIETRICH H WANDREI D SEILER U KONIG U
Citation: A. Schuppen et al., 1-W SIGE POWER HBTS FOR MOBILE COMMUNICATION, IEEE microwave and guided wave letters, 6(9), 1996, pp. 341-343
FULLY SELF-ALIGNED DOUBLE MESA SIGE-HBT WITH EXTERNAL TRANSISTOR OPTIMIZATION
Authors: BEHAMMER D ALBERS JN GEPPERT W BOSCH BG SCHUPPEN A KIBBEL H
Citation: D. Behammer et al., FULLY SELF-ALIGNED DOUBLE MESA SIGE-HBT WITH EXTERNAL TRANSISTOR OPTIMIZATION, Electronics Letters, 32(19), 1996, pp. 1830-1832
CLASS-A SIGE HBT POWER-AMPLIFIERS AT C-BAND FREQUENCIES
Authors: ERBEN U WAHL M SCHUPPEN A SCHUMACHER H
Citation: U. Erben et al., CLASS-A SIGE HBT POWER-AMPLIFIERS AT C-BAND FREQUENCIES, IEEE microwave and guided wave letters, 5(12), 1995, pp. 435-436
MESA AND PLANAR SIGE-HBTS ON MBE-WAFERS
Authors: SCHUPPEN A GRUHLE A KIBBEL H KONIG U
Citation: A. Schuppen et al., MESA AND PLANAR SIGE-HBTS ON MBE-WAFERS, Journal of materials science. Materials in electronics, 6(5), 1995, pp. 298-305
COSI2 AND TISI2 FOR SI SIGE HETERODEVICES
Authors: GLUCK M SCHUPPEN A ROSLER M HEINRICH W HERSENER J KONIG U YAM O CYTERMANN C EIZENBERG M
Citation: M. Gluck et al., COSI2 AND TISI2 FOR SI SIGE HETERODEVICES, Thin solid films, 270(1-2), 1995, pp. 549-554
HIGH-SPEED SIGE HETEROBIPOLAR TRANSISTORS
Authors: SCHUPPEN A DIETRICH H
Citation: A. Schuppen et H. Dietrich, HIGH-SPEED SIGE HETEROBIPOLAR TRANSISTORS, Journal of crystal growth, 157(1-4), 1995, pp. 207-214
ASSESSMENT OF INTERVALLEY F-SCATTERING TIME CONSTANTS IN SI SIGE HETEROSTRUCTURES/
Authors: BEISSWANGER F JORKE H KIBBEL H HERZOG HJ SCHUPPEN A SAUER R
Citation: F. Beisswanger et al., ASSESSMENT OF INTERVALLEY F-SCATTERING TIME CONSTANTS IN SI SIGE HETEROSTRUCTURES/, Journal of crystal growth, 157(1-4), 1995, pp. 222-226
SI SIGE MMICS
Authors: LUY JF STROHM KM SASSE HE SCHUPPEN A BUECHLER J WOLLITZER M GRUHLE A SCHAFFLER F GUETTICH U KLAASSEN A
Citation: Jf. Luy et al., SI SIGE MMICS, IEEE transactions on microwave theory and techniques, 43(4), 1995, pp. 705-714
PHOSPHORUS REDISTRIBUTION DURING THE FORMATION OF BURIED COSI2 LAYERSBY ION-BEAM SYNTHESIS
Authors: SCHUPPEN A JEBASINSKI R MANTL S MARSO M LUTH H BREUER U HOLZBRECHER H
Citation: A. Schuppen et al., PHOSPHORUS REDISTRIBUTION DURING THE FORMATION OF BURIED COSI2 LAYERSBY ION-BEAM SYNTHESIS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 84(2), 1994, pp. 143-147
ELECTRICAL AND STRUCTURAL-PROPERTIES OF BURIED COSI2 LAYERS IN SI(100) GROWN BY MOLECULAR-BEAM ALLOTAXY
Authors: DOLLE M GASSIG U BAY HL SCHUPPEN A MANTL S
Citation: M. Dolle et al., ELECTRICAL AND STRUCTURAL-PROPERTIES OF BURIED COSI2 LAYERS IN SI(100) GROWN BY MOLECULAR-BEAM ALLOTAXY, Thin solid films, 253(1-2), 1994, pp. 485-489
ELECTRON-TRANSPORT OF INHOMOGENEOUS ALPHA-FESI2 (111)SI SCHOTTKY BARRIERS/
Authors: RADERMACHER K SCHUPPEN A MANTL S
Citation: K. Radermacher et al., ELECTRON-TRANSPORT OF INHOMOGENEOUS ALPHA-FESI2 (111)SI SCHOTTKY BARRIERS/, Solid-state electronics, 37(3), 1994, pp. 443-449
OVERGROWN SILICON PBTS - CALCULATIONS AND MEASUREMENTS
Authors: SCHUPPEN A MARSO M LUTH H
Citation: A. Schuppen et al., OVERGROWN SILICON PBTS - CALCULATIONS AND MEASUREMENTS, I.E.E.E. transactions on electron devices, 41(5), 1994, pp. 751-760
DYNAMIC CHARACTERIZATION OF SI SIGE POWER HBTS/
Authors: ERBEN U GRUHLE A SCHUPPEN A KIBBEL H KOENIG U
Citation: U. Erben et al., DYNAMIC CHARACTERIZATION OF SI SIGE POWER HBTS/, Electronics Letters, 30(6), 1994, pp. 525-527
SIGE-HBTS WITH HIGH F(T) AT MODERATE CURRENT DENSITIES
Authors: SCHUPPEN A GRUHLE A KIBBEL H ERBEN U KONIG U
Citation: A. Schuppen et al., SIGE-HBTS WITH HIGH F(T) AT MODERATE CURRENT DENSITIES, Electronics Letters, 30(14), 1994, pp. 1187-1188
INTERFACE STRUCTURE AND SCHOTTKY-BARRIER HEIGHT OF BURIED COSI2 SI(001) LAYERS/
Authors: WERNER P JAGER W SCHUPPEN A
Citation: P. Werner et al., INTERFACE STRUCTURE AND SCHOTTKY-BARRIER HEIGHT OF BURIED COSI2 SI(001) LAYERS/, Journal of applied physics, 74(6), 1993, pp. 3846-3854
SUBMICROMETER SILICON PERMEABLE BASE TRANSISTORS WITH BURIED COSI2 GATES
Authors: SCHUPPEN A VESCAN L MARSO M VANDERHART A LUTH H BENEKING H
Citation: A. Schuppen et al., SUBMICROMETER SILICON PERMEABLE BASE TRANSISTORS WITH BURIED COSI2 GATES, Electronics Letters, 29(2), 1993, pp. 215-217
Risultati: 1-21 |