Authors: SCHURMAN MJ SLAGAJ T TRAN C KARLICEK R FERGUSON I STALL R THOMPSON A

Citation: Mj. Schurman et al., REPRODUCIBILITY OF GAN AND INGAN FILMS GROWN IN A MULTIWAFER ROTATING-DISC REACTOR, Materials science & engineering. B, Solid-state materials for advanced technology, 43(1-3), 1997, pp. 222-227

Authors: HWANG CY SCHURMAN MJ MAYO WE LU YC STALL RA SALAGAJ T

Citation: Cy. Hwang et al., EFFECT OF STRUCTURAL DEFECTS AND CHEMICAL-IMPURITIES ON HALL MOBILITIES IN LOW-PRESSURE MOCVD GROWN GAN, Journal of electronic materials, 26(3), 1997, pp. 243-251

Authors: GRIESHABER W SCHUBERT EF GOEPFERT ID KARLICEK RF SCHURMAN MJ TRAN C

Citation: W. Grieshaber et al., COMPETITION BETWEEN BAND-GAP AND YELLOW LUMINESCENCE IN GAN AND ITS RELEVANCE FOR OPTOELECTRONIC DEVICES, Journal of applied physics, 80(8), 1996, pp. 4615-4620

Authors: HWANG CY SCHURMAN MJ MAYO WE LI Y LU Y LIU H SALAGAJ T STALL RA

Citation: Cy. Hwang et al., EFFECT OF SUBSTRATE PRETREATMENT ON GROWTH OF GAN ON (0001)SAPPHIRE BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(3), 1995, pp. 672-675

Authors: SCHURMAN MJ DUNJKO V GOLDSTEIN S BARON M MANTZ AW

Citation: Mj. Schurman et al., LINE STRENGTHS FOR DELTA-NU(3)=1 TRANSITIONS IN ISOTOPIC CS2 SPECIES WITH A STABILIZED TUNABLE DIODE-LASER, Journal of quantitative spectroscopy & radiative transfer, 52(3-4), 1994, pp. 379-388