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Results: 1-25/38
Authors:
GOFER Y
KILLIAN JG
SARKER H
POEHLER TO
SEARSON PC
Citation: Y. Gofer et al., THE ELECTROCHEMISTRY OF FLUORINE-SUBSTITUTED POLYPHENYLTHIOPHENES FORCHARGE STORAGE APPLICATIONS, Journal of electroanalytical chemistry [1992], 443(1), 1998, pp. 103-115
Authors:
WONG EM
BONEVICH JE
SEARSON PC
Citation: Em. Wong et al., GROWTH-KINETICS OF NANOCRYSTALLINE ZNO PARTICLES FROM COLLOIDAL SUSPENSIONS, JOURNAL OF PHYSICAL CHEMISTRY B, 102(40), 1998, pp. 7770-7775
Authors:
NATARAJAN A
OSKAM G
SEARSON PC
Citation: A. Natarajan et al., THE POTENTIAL DISTRIBUTION AT THE SEMICONDUCTOR SOLUTION INTERFACE/, JOURNAL OF PHYSICAL CHEMISTRY B, 102(40), 1998, pp. 7793-7799
Authors:
OSKAM G
SEARSON PC
Citation: G. Oskam et Pc. Searson, SOL-GEL SYNTHESIS AND CHARACTERIZATION OF CARBON CERAMIC COMPOSITE ELECTRODES/, JOURNAL OF PHYSICAL CHEMISTRY B, 102(14), 1998, pp. 2464-2468
Authors:
SARKER H
GOFER Y
KILLIAN JG
POEHLER TO
SEARSON PC
Citation: H. Sarker et al., SYNTHESIS AND CHARACTERIZATION OF A SERIES OF FLUORINE-SUBSTITUTED PHENYLENE-THIENYL POLYMERS FOR BATTERY APPLICATIONS, Synthetic metals, 97(1), 1998, pp. 1-6
Authors:
OSKAM G
LONG JG
NATARAJAN A
SEARSON PC
Citation: G. Oskam et al., ELECTROCHEMICAL DEPOSITION OF METALS ONTO SILICON, Journal of physics. D, Applied physics, 31(16), 1998, pp. 1927-1949
Authors:
HOFFMANN PM
OSKAM G
SEARSON PC
Citation: Pm. Hoffmann et al., ANALYSIS OF THE IMPEDANCE RESPONSE DUE TO SURFACE-STATES AT THE SEMICONDUCTOR SOLUTION INTERFACE/, Journal of applied physics, 83(8), 1998, pp. 4309-4323
Authors:
NATARAJAN A
OSKAM G
SEARSON PC
Citation: A. Natarajan et al., CHARACTERIZATION OF SILICON SURFACES IN HF SOLUTION USING MICROWAVE REFLECTIVITY, Journal of applied physics, 83(4), 1998, pp. 2112-2120
Authors:
LIU K
CHIEN CL
SEARSON PC
KUI YZ
Citation: K. Liu et al., GIANT POSITIVE MAGNETORESISTANCE IN ARRAYS OF SEMIMETALLIC BISMUTH NANOWIRES, IEEE transactions on magnetics, 34(4), 1998, pp. 1093-1095
Authors:
OSKAM G
VANHEERDEN D
SEARSON PC
Citation: G. Oskam et al., ELECTROCHEMICAL FABRICATION OF N-SI AU SCHOTTKY JUNCTIONS/, Applied physics letters, 73(22), 1998, pp. 3241-3243
Authors:
LIU KI
CHIEN CL
SEARSON PC
YUZHANG K
Citation: Ki. Liu et al., STRUCTURAL AND MAGNETOTRANSPORT PROPERTIES OF ELECTRODEPOSITED BISMUTH NANOWIRES (VOL 73, 1436, 1998), Applied physics letters, 73(15), 1998, pp. 2222-2222
Authors:
LIU K
CHIEN CL
SEARSON PC
KUI YZ
Citation: K. Liu et al., STRUCTURAL AND MAGNETOTRANSPORT PROPERTIES OF ELECTRODEPOSITED BISMUTH NANOWIRES, Applied physics letters, 73(10), 1998, pp. 1436-1438
Authors:
ROSS FM
OSKAM G
SEARSON PC
MACAULAY JM
LIDDLE JA
Citation: Fm. Ross et al., CRYSTALLOGRAPHIC ASPECTS OF PORE FORMATION IN GALLIUM-ARSENIDE AND SILICON, Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties, 75(2), 1997, pp. 525-539
Authors:
SARKER H
GOFER Y
KILLIAN JG
POEHLER TO
SEARSON PC
Citation: H. Sarker et al., SYNTHESIS AND CHARACTERIZATION OF FLUORO-SUBSTITUTED POLYPHENYLTHIOPHENES FOR CHARGE STORAGE APPLICATIONS, Synthetic metals, 88(3), 1997, pp. 179-185
Authors:
OSKAM G
NATARAJAN A
SEARSON PC
ROSS FM
Citation: G. Oskam et al., THE FORMATION OF POROUS GAAS IN HF SOLUTIONS, Applied surface science, 119(1-2), 1997, pp. 160-168
Authors:
NIKOLOVA MS
NATARAJAN A
SEARSON PC
CHAKAROVA GS
MACAULAY JM
Citation: Ms. Nikolova et al., ELECTROCHEMICAL FABRICATION OF SHARP NICKEL TIPS IN H2SO4 SOLUTIONS, Journal of the Electrochemical Society, 144(2), 1997, pp. 455-460
Authors:
GOFER Y
SARKER H
KILLIAN JG
POEHLER TO
SEARSON PC
Citation: Y. Gofer et al., AN ALL-POLYMER CHARGE STORAGE DEVICE (VOL 71, PG 1582, 1997), Applied physics letters, 71(23), 1997, pp. 3447-3447
Authors:
GOFER Y
SARKER H
KILLIAN JG
POEHLER TO
SEARSON PC
Citation: Y. Gofer et al., AN ALL-POLYMER CHARGE STORAGE DEVICE, Applied physics letters, 71(11), 1997, pp. 1582-1584
Authors:
OSKAM G
HOFFMANN PM
SEARSON PC
Citation: G. Oskam et al., IN-SITU MEASUREMENTS OF INTERFACE STATES AT SILICON SURFACES IN FLUORIDE SOLUTIONS, Physical review letters, 76(9), 1996, pp. 1521-1524
Authors:
OSKAM G
HOFFMANN PM
SCHMIDT JC
SEARSON PC
Citation: G. Oskam et al., ENERGETICS AND KINETICS OF SURFACE-STATES AT N-TYPE SILICON SURFACES IN AQUEOUS FLUORIDE SOLUTIONS, Journal of physical chemistry, 100(5), 1996, pp. 1801-1806
Authors:
CAO F
OSKAM G
MEYER GJ
SEARSON PC
Citation: F. Cao et al., ELECTRON-TRANSPORT IN POROUS NANOCRYSTALLINE TIO2 PHOTOELECTROCHEMICAL CELLS, Journal of physical chemistry, 100(42), 1996, pp. 17021-17027
Authors:
OSKAM G
SCHMIDT JC
HOFFMANN PM
SEARSON PC
Citation: G. Oskam et al., ELECTRICAL-PROPERTIES OF N-TYPE (111)SI IN AQUEOUS K4FE(CN)(6) SOLUTION .1. INTERFACE STATES AND RECOMBINATION IMPEDANCE, Journal of the Electrochemical Society, 143(8), 1996, pp. 2531-2537
Authors:
OSKAM G
SCHMIDT JC
SEARSON PC
Citation: G. Oskam et al., ELECTRICAL-PROPERTIES OF N-TYPE (111)SI IN AQUEOUS K4FE(CN)(4) SOLUTION .2. INTENSITY-MODULATED PHOTOCURRENT SPECTROSCOPY, Journal of the Electrochemical Society, 143(8), 1996, pp. 2538-2543
Authors:
KILLIAN JG
COFFEY BM
GAO F
POEHLER TO
SEARSON PC
Citation: Jg. Killian et al., POLYPYRROLE COMPOSITE ELECTRODES IN AN ALL-POLYMER BATTERY SYSTEM, Journal of the Electrochemical Society, 143(3), 1996, pp. 936-942
Authors:
SEARSON PC
CAMMARATA RC
CHIEN CL
Citation: Pc. Searson et al., ELECTROCHEMICAL PROCESSING OF METALLIC NANOWIRE ARRAYS AND NANOCOMPOSITES, Journal of electronic materials, 24(8), 1995, pp. 955-960