Authors:
NEMOV SA
ZHITINSKAYA MK
PARFENEV RV
SHAMSHUR DV
Citation: Sa. Nemov et al., EFFECT OF LOW-LEVEL GE ADDITIONS ON THE SUPERCONDUCTING TRANSITION INPBTE-TL, Physics of the solid state, 40(7), 1998, pp. 1096-1097
Authors:
NEMOV SA
NASREDINOV FS
PARFENEV RV
RAVICH YI
CHERNYAEV AV
SHAMSHUR DV
Citation: Sa. Nemov et al., IMPURE ELECTRON-STATES OF TL AND SN ATOMS IN (PBTE)(0.9)(PBS)(0.1) SOLID-SOLUTION, Fizika tverdogo tela, 38(5), 1996, pp. 1586-1591
Authors:
NEMOV SA
NASREDINOV FS
PARFENEV RV
ZHITINSKAYA MK
CHERNYAEV AV
SHAMSHUR DV
Citation: Sa. Nemov et al., EFFECT OF SN IMPURITIES ON ELECTROPHYSICA L PROPERTIES AND SUPERCONDUCTING TRANSITIONS IN (PBTE)(0.95)(PBS)(0.05)TL, Fizika tverdogo tela, 38(2), 1996, pp. 550-557
Authors:
NEMOV SA
PARFENIEV RV
SHAMSHUR DV
SAFONCHIK MO
STEPIENDAMM J
Citation: Sa. Nemov et al., SUPERCONDUCTIVITY IN THE PBTE-SNTE-GETE SYSTEM WITH IN AND TL QUASI-LOCAL IMPURITY STATES, Czechoslovak journal of Physics, 46, 1996, pp. 863-864
Citation: Nv. Agrinskaya et al., TEMPERATURE-DEPENDENCE OF MAGNETORESISTAN CE IN REGIME OF HOPPING CONDUCTIVITY WITH VARYING HOPPING LENGTH - RESULTS FOR THE ALLOYED CDTE, Zhurnal eksperimental'noj i teoreticheskoj fiziki, 107(6), 1995, pp. 2063-2079
Authors:
PARFENIEV RV
SHAMSHUR DV
SHAKHOV MA
CHRAPKIEWICZ Z
Citation: Rv. Parfeniev et al., SUPERCONDUCTIVITY AND MAGNETISM IN IN-DOPED LEAD-TIN TELLURIDES, Journal of alloys and compounds, 219, 1995, pp. 313-315
Authors:
NEMOV SA
MUSIKHIN SF
POPOV DI
PROSHIN VI
SHAMSHUR DV
Citation: Sa. Nemov et al., SUPERCONDUCTING AND ELECTROPHYSICAL PROPE RTIES OF SN1-XGEXTE-IN THIN-FILMS IN SOLID-SOLUTIONS, Fizika tverdogo tela, 37(11), 1995, pp. 3366-3373
Authors:
NEMOV SA
MUSIKHIN SF
PARFENEV RV
SVETLOV VN
POPOV DN
PROSHIN VI
SHAMSHUR DV
Citation: Sa. Nemov et al., EFFECT OF GE ADMIXTURES ON THE COMPONENT DISTRIBUTION AND SUPERCONDUCTING TRANSITION IN SN1-ZPBZTE-IN FILMS, Fizika tverdogo tela, 37(11), 1995, pp. 3523-3525
Authors:
MUSIKHIN SF
NEMOV SA
PROSHIN VI
SEMIN IE
SHAMSHUR DV
BEREZIN AV
IMAMKULIEV SD
Citation: Sf. Musikhin et al., ELECTRICAL-PROPERTIES OF (SN0.8GE0.2)1-XINXTE FILMS FORMED BY A LASER-EVAPORATION METHOD, Semiconductors, 27(3), 1993, pp. 288-290