Authors: WANG WC CHENG SY CHANG WL PAN HJ SHIE YH LIU WC

Citation: Wc. Wang et al., INVESTIGATION OF INGAP GAAS DOUBLE-DELTA-DOPED HETEROJUNCTION BIPOLAR-TRANSISTOR/, Semiconductor science and technology, 13(6), 1998, pp. 630-633

Authors: CHENG SY PAN HJ SHIE YH CHEN JY CHANG WL WANG WC LIN PH LIU WC

Citation: Sy. Cheng et al., INFLUENCE OF THE DELTA-DOPING SHEET AND SETBACK LAYER ON THE PERFORMANCE OF AN INGAP GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR/, Semiconductor science and technology (Print), 13(10), 1998, pp. 1187-1192

Authors: LIN PH CHENG SY CHANG WL PAN HJ SHIE YH LIU WC TSAI JH

Citation: Ph. Lin et al., INVESTIGATION OF AN ALINAS GAINAS SUPERLATTICE-CONFINED EMITTER BIPOLAR-TRANSISTOR (SCEBT)/, Materials chemistry and physics, 57(1), 1998, pp. 77-80

Authors: LIU WC TSAI JH CHENG SY CHANG WL PAN HJ SHIE YH

Citation: Wc. Liu et al., INVESTIGATION OF GAAS-BASED HETEROSTRUCTURE-EMITTER BIPOLAR-TRANSISTORS (HEBTS), Thin solid films, 324(1-2), 1998, pp. 219-224

Authors: LIU WC CHENG SY CHANG WL PAN HJ SHIE YH

Citation: Wc. Liu et al., APPLICATION OF DELTA-DOPED WIDE-GAP COLLECTOR STRUCTURE FOR HIGH-BREAKDOWN AND LOW-OFFSET VOLTAGE TRANSISTORS, Applied physics letters, 73(10), 1998, pp. 1397-1399