Authors: SHIH JR LEE JH LIEW BK HWANG HL

Citation: Jr. Shih et al., A NOVEL THIN GATE-OXIDE-THICKNESS MEASUREMENT METHOD BY LDD (LIGHTLY-DOPED-DRAIN)-NMOS (N-CHANNEL METAL-OXIDE-SEMICONDUCTOR) TRANSISTORS, JPN J A P 2, 37(1AB), 1998, pp. 1-3