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THE ANALYSIS OF THE STACKED SURROUNDING GATE TRANSISTOR (S-SGT) DRAM FOR THE HIGH-SPEED AND LOW-VOLTAGE OPERATION
Authors:
ENDOH T SHINMEI K SAKURABA H MASUOKA F
Citation:
T. Endoh et al., THE ANALYSIS OF THE STACKED SURROUNDING GATE TRANSISTOR (S-SGT) DRAM FOR THE HIGH-SPEED AND LOW-VOLTAGE OPERATION, IEICE transactions on electronics, E81C(9), 1998, pp. 1491-1498
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