Authors: ISHIGAMI S ISHII S SHINYASHIKI H FURUYA H SHINGYOUJI T

Citation: S. Ishigami et al., METAL IMPURITY TRAPPING EFFECT BY STRESS AT EDGES OF LOCAL OXIDATION OF SILICON STRUCTURE, JPN J A P 1, 33(4A), 1994, pp. 1728-1734

Authors: ISHIGAMI S SHINYASHIKI H FURUYA H SHINGYOUJI T

Citation: S. Ishigami et al., A STUDY OF DEFECT FORMATION MECHANISM AT EDGES OF LOCAL OXIDATION OF SILICON STRUCTURE, JPN J A P 2, 33(9A), 1994, pp. 120001198-120001201