Authors: GALYAUTDINOV MF KURBATOVA NV BUINOVA EY SHTYRKOV EI BURKARAEV AA

Citation: Mf. Galyautdinov et al., STUDY OF POROUS SILICON OBTAINED BY KRYPTON ION-IMPLANTATION AND LASER ANNEALING, Semiconductors, 31(9), 1997, pp. 970-973

Authors: GALYAUTDINOV MF KURBATOVA NV MOISEEV SA SHTYRKOV EI

Citation: Mf. Galyautdinov et al., CHARACTERISTIC FEATURES OF RAMAN-SCATTERING OF TIGHT IN SILICON DOPEDWITH HIGH KRYPTON DOSES, Semiconductors, 31(7), 1997, pp. 669-671

Authors: MOISEEVA SA SHTYRKOV EI

Citation: Sa. Moiseeva et Ei. Shtyrkov, ON A NONRESONANT PULSED INVERSION AND ENE RGY-ABSORPTION BY AN ATOM, Optika i spektroskopia, 79(3), 1995, pp. 360-362

Authors: SHTYRKOV EI

Citation: Ei. Shtyrkov, QUANTUM JUMP DYNAMICS IN A SINGLE-ATOM, Izvestia Akademii nauk SSSR. Seria fiziceskaa, 58(8), 1994, pp. 141-144

Authors: SHTYRKOV EI

Citation: Ei. Shtyrkov, QUANTUM JUMP DYNAMICS IN A SINGLE-ATOM, Izvestia Akademii nauk SSSR. Seria fiziceskaa, 58(8), 1994, pp. 141-144