Authors: GOMEZ E SILVA R SILVAANDRADE F GRACIAJIMENEZ JM

Citation: E. Gomez et al., GROWTH AND CHARACTERIZATION OF CLOSE-SPACED VAPOR TRANSPORT GAAS-LAYERS, USING ATOMIC-HYDROGEN AS THE INITIAL REACTANT, Revista Mexicana de Fisica, 43(5), 1997, pp. 785-794

Authors: GOMEZ E SILVA R SILVAANDRADE F

Citation: E. Gomez et al., SEM AND EDS CHARACTERIZATION OF GAAS-LAYERS GROWN BY THE CLOSE-SPACEDVAPOR TRANSPORT TECHNIQUE AT 4 DIFFERENT GEOMETRIES USING ATOMIC-HYDROGEN AS INITIAL REACTANT, Revista Mexicana de Fisica, 43(2), 1997, pp. 290-299

Authors: ILINSKII AV CHAVEZ F PRUTSKIJ TA SILVAANDRADE F

Citation: Av. Ilinskii et al., AN OPTICAL METHOD FOR DETERMINING THE IONIZATION-ENERGY OF THE CENTERS CONTROLLING CHARGE-TRANSFER IN GAAS-BASED PIN-STRUCTURES, Revista Mexicana de Fisica, 41(6), 1995, pp. 841-847

Authors: PRUTSKIJ T SILVA R CHAVEZ F SILVAANDRADE F

Citation: T. Prutskij et al., SCANNING ELECTRON-MICROSCOPIC DETERMINATI ON OF LAYER THICKNESS IN NANOMETRIC HETEROSTRUCTURES OF NANOMETRIC GAAS-ALXGA1-XAS, Revista Mexicana de Fisica, 41(2), 1995, pp. 297-304

Authors: ILINSKII AV CHAVEZ F PRUTSKIJ TA SILVAANDRADE F

Citation: Av. Ilinskii et al., THE ELECTRIC-FIELD DISTRIBUTION OF P-I-N STRUCTURES MADE OF GAAS, Revista Mexicana de Fisica, 40(4), 1994, pp. 602-608

Authors: SILVAANDRADE F CHAVEZ F GOMEZ E

Citation: F. Silvaandrade et al., EPITAXIAL GAAS GROWTH USING ATOMIC-HYDROGEN AS THE REACTANT, Journal of applied physics, 76(3), 1994, pp. 1946-1947