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Results: 1-25/31
Authors:
MEYER T
SIRRINGHAUS H
VONKANEL H
Citation: T. Meyer et al., STUDYING INTERFACES ON A NM SCALE BY BEEM, Thin solid films, 318(1-2), 1998, pp. 195-200
Authors:
SIRRINGHAUS H
TESSLER N
FRIEND RH
Citation: H. Sirringhaus et al., INTEGRATED OPTOELECTRONIC DEVICES BASED ON CONJUGATED POLYMERS, Science, 280(5370), 1998, pp. 1741-1744
Authors:
LI XC
SIRRINGHAUS H
GARNIER F
HOLMES AB
MORATTI SC
FEEDER N
CLEGG W
TEAT SJ
FRIEND RH
Citation: Xc. Li et al., A HIGHLY PI-STACKED ORGANIC SEMICONDUCTOR FOR THIN-FILM TRANSISTORS BASED ON FUSED THIOPHENES, Journal of the American Chemical Society, 120(9), 1998, pp. 2206-2207
Authors:
SIRRINGHAUS H
THEISS SD
KAHN A
WAGNER S
Citation: H. Sirringhaus et al., SELF-PASSIVATED COPPER GATES FOR AMORPHOUS-SILICON THIN-FILM TRANSISTORS, IEEE electron device letters, 18(8), 1997, pp. 388-390
Authors:
VONKANEL H
SIRRINGHAUS H
MEYER T
LEE EY
Citation: H. Vonkanel et al., ELECTRONIC TRANSPORT IN EPITAXIAL-FILMS STUDIED BY SCANNING PROBE TECHNIQUES, Surface review and letters, 4(2), 1997, pp. 307-318
Authors:
VONKANEL H
MEYER T
SIRRINGHAUS H
LEE EY
Citation: H. Vonkanel et al., BALLISTIC-ELECTRON-EMISSION MICROSCOPY AT EPITAXIAL METAL SEMICONDUCTOR INTERFACES/, Science Reports of the Research Institutes, Tohoku University, Series A: Physics, Chemistry, and Metallurgy, 44(2), 1997, pp. 157-163
Authors:
VONKANEL H
MEYER T
SIRRINGHAUS H
Citation: H. Vonkanel et al., IN-SITU BEEM STUDY OF INTERFACIAL DISLOCATIONS AND POINT-DEFECTS, Journal of crystal growth, 175, 1997, pp. 340-345
Authors:
WU CI
HIROSE Y
SIRRINGHAUS H
KAHN A
Citation: Ci. Wu et al., ELECTRON-HOLE INTERACTION ENERGY IN THE ORGANIC MOLECULAR SEMICONDUCTOR PTCDA, Chemical physics letters, 272(1-2), 1997, pp. 43-47
Authors:
SIRRINGHAUS H
FRIEND RH
LI XC
MORATTI SC
HOLMES AB
FEEDER N
Citation: H. Sirringhaus et al., BIS(DITHIENOTHIOPHENE) ORGANIC FIELD-EFFECT TRANSISTORS WITH A HIGH ON OFF RATIO/, Applied physics letters, 71(26), 1997, pp. 3871-3873
Authors:
SIRRINGHAUS H
MEYER T
LEE EY
VONKANEL H
Citation: H. Sirringhaus et al., ATOMIC-SCALE VARIATIONS OF THE STM TUNNELING DISTRIBUTION OBSERVED BYBALLISTIC-ELECTRON-EMISSION MICROSCOPY, Physica scripta. T, T66, 1996, pp. 282-286
Authors:
SIRRINGHAUS H
MEYER T
LEE EY
VONKANEL H
Citation: H. Sirringhaus et al., SPATIAL VARIATIONS OF HOT-CARRIER TRANSMISSION ACROSS COSI2 SI INTERFACES ON A NANOMETER-SCALE/, Physical review. B, Condensed matter, 53(23), 1996, pp. 15944-15950
Authors:
SIRRINGHAUS H
MEYER T
LEE EY
VONKANEL H
Citation: H. Sirringhaus et al., BALLISTIC-ELECTRON-EMISSION MICROSCOPY AS A PROBE FOR SURFACE SCIENCE, Surface science, 358(1-3), 1996, pp. 386-393
Authors:
SIRRINGHAUS H
LEE EY
KAFADER U
VONKANEL H
Citation: H. Sirringhaus et al., IN-SITU BALLISTIC-CARRIER SPECTROSCOPY ON EPITAXIAL COSI2 SI(111) ANDSI(100)/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(4), 1995, pp. 1848-1852
Authors:
KAFADER U
SIRRINGHAUS H
VONKANEL H
Citation: U. Kafader et al., IN-SITU DC-PLASMA CLEANING OF SILICON SURFACES, Applied surface science, 90(3), 1995, pp. 297-302
Authors:
LEE EY
SIRRINGHAUS H
KAFADER U
VONKANEL H
Citation: Ey. Lee et al., BALLISTIC-ELECTRON-EMISSION-MICROSCOPY INVESTIGATION OF HOT-CARRIER TRANSPORT IN EPITAXIAL COSI2 FILMS ON SI(100) AND SI(111), Physical review. B, Condensed matter, 52(3), 1995, pp. 1816-1829
Authors:
VONKANEL H
LEE EY
SIRRINGHAUS H
KAFADER U
Citation: H. Vonkanel et al., EPITAXIAL METAL SILICIDES - INTERFACE MAPPING BY SCANNING PROBE TECHNIQUES, Thin solid films, 267(1-2), 1995, pp. 89-94
Authors:
SIRRINGHAUS H
LEE EY
VONKANEL H
Citation: H. Sirringhaus et al., SURFACE EFFECTS IN BALLISTIC-ELECTRON-EMISSION MICROSCOPY, Surface science, 333, 1995, pp. 1277-1282
Authors:
SIRRINGHAUS H
LEE EY
VONKANEL H
Citation: H. Sirringhaus et al., ATOMIC-SCALE VARIATIONS OF THE TUNNELING DISTRIBUTION IN A SCANNING TUNNELING MICROSCOPE OBSERVED BY BALLISTIC-ELECTRON-EMISSION MICROSCOPY, Physical review letters, 74(20), 1995, pp. 3999-4002
Authors:
SIRRINGHAUS H
LEE EY
VONKANEL H
Citation: H. Sirringhaus et al., IN-SITU STUDY OF EPITAXIAL COSI2 SI(111) BY BALLISTIC-ELECTRON-EMISSION MICROSCOPY/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(4), 1994, pp. 2629-2633
Authors:
LEE EY
SIRRINGHAUS H
VONKANEL H
Citation: Ey. Lee et al., SCANNING-TUNNELING-MICROSCOPY INVESTIGATION OF THE QUANTUM-SIZE EFFECT IN EPITAXIAL COSI2 SI(111)/, Physical review. B, Condensed matter, 50(8), 1994, pp. 5807-5809
Authors:
LEE EY
SIRRINGHAUS H
VONKANEL H
Citation: Ey. Lee et al., DIRECT MAPPING OF THE COSI2 SI(111) INTERFACE BY BALLISTIC-ELECTRON-EMISSION MICROSCOPY AND MODULATION SPECTROSCOPY/, Physical review. B, Condensed matter, 50(19), 1994, pp. 14714-14717
Authors:
LEE EY
SIRRINGHAUS H
VONKANEL H
Citation: Ey. Lee et al., ELECTRON TRANSMISSION PROBABILITY ACROSS COSI2 N-SI(111) INTERFACES MEASURED WITH A SCANNING TUNNELING MICROSCOPE/, Surface science, 314(1), 1994, pp. 120000823-120000828
Authors:
SIRRINGHAUS H
LEE EY
VONKANEL H
Citation: H. Sirringhaus et al., HOT-CARRIER SCATTERING AT INTERFACIAL DISLOCATIONS OBSERVED BY BALLISTIC-ELECTRON-EMISSION MICROSCOPY, Physical review letters, 73(4), 1994, pp. 577-580
Authors:
SCHWARZ C
ONDA N
GONCALVESCONTO S
SIRRINGHAUS H
VONKANEL H
PIXLEY RE
Citation: C. Schwarz et al., ION CHANNELING STUDIES OF EPITAXIAL FE AND CO SILICIDES ON SI, Journal of applied physics, 76(11), 1994, pp. 7256-7264
Authors:
KAFADER U
SIRRINGHAUS H
RAMM J
DOMMANN A
VONKANEL H
Citation: U. Kafader et al., IN-SITU DC-HYDROGEN PLASMA CLEANING OF SI(111) SURFACES, Helvetica Physica Acta, 67(2), 1994, pp. 211-212