Authors:
BYKOVSKII VA
UTENKO VI
SHOKH VF
KORSHUNOV FP
SOLODOVNIKOV ES
Citation: Va. Bykovskii et al., RADIATIVE RECOMBINATION AND IMPURITY-DEFECT INTERACTIONS IN NUCLEAR-DOPED GALLIUM-ARSENIDE PRODUCED UNDER DIFFERENT IRRADIATION AND CRYSTAL-GROWTH CONDITIONS, Semiconductors, 30(7), 1996, pp. 685-689