Authors:
SOMERVILLE MH
BLANCHARD R
DELALAMO JA
DUH G
CHAO PC
Citation: Mh. Somerville et al., A NEW GATE CURRENT EXTRACTION TECHNIQUE FOR MEASUREMENT OF ON-STATE BREAKDOWN VOLTAGE IN HEMTS, IEEE electron device letters, 19(11), 1998, pp. 405-407
Citation: Mh. Somerville et al., OFF-STATE BREAKDOWN IN POWER PHEMTS - THE IMPACT OF THE SOURCE, I.E.E.E. transactions on electron devices, 45(9), 1998, pp. 1883-1889
Citation: An. Ernst et al., A NEW Z(11) IMPEDANCE TECHNIQUE TO EXTRACT MOBILITY AND SHEET CARRIERCONCENTRATION IN HFETS AND MESFETS, I.E.E.E. transactions on electron devices, 45(1), 1998, pp. 9-13
Citation: Mh. Somerville et al., DIRECT CORRELATION BETWEEN IMPACT IONIZATION AND THE KINK EFFECT IN INALAS INGAAS HEMTS/, IEEE electron device letters, 17(10), 1996, pp. 473-475
Citation: Mh. Somerville et al., TEMPERATURE AND CARRIER DENSITY-DEPENDENCE OF MOBILITY IN A HEAVILY-DOPED QUANTUM-WELL, Applied physics letters, 64(24), 1994, pp. 3276-3278