AAAAAA

   
Results: 1-3 |
Results: 3
PIEZOSPECTROSCOPIC BEHAVIOR AND STRUCTURE OF THE 0.95-EV PHOTOLUMINESCENCE CENTERS IN GAAS DOPED WITH TE OR SN
Authors: GUTKIN AA RESHCHIKOV MA SOSNOVSKII VR
Citation: Aa. Gutkin et al., PIEZOSPECTROSCOPIC BEHAVIOR AND STRUCTURE OF THE 0.95-EV PHOTOLUMINESCENCE CENTERS IN GAAS DOPED WITH TE OR SN, Semiconductor science and technology, 9(12), 1994, pp. 2247-2252
INVESTIGATION OF THE VGASNGA COMPLEX IN GAAS BY THE POLARIZATION PHOTOLUMINESCENCE AND PIEZOSPECTROSCOPIC METHODS .1. STRUCTURE OF THE COMPLEX AND ITS REORIENTATION UNDER LOW UNIAXIAL PRESSURES
Authors: GUTKIN AA RESHCHIKOV MA SOSNOVSKII VR
Citation: Aa. Gutkin et al., INVESTIGATION OF THE VGASNGA COMPLEX IN GAAS BY THE POLARIZATION PHOTOLUMINESCENCE AND PIEZOSPECTROSCOPIC METHODS .1. STRUCTURE OF THE COMPLEX AND ITS REORIENTATION UNDER LOW UNIAXIAL PRESSURES, Semiconductors, 27(9), 1993, pp. 838-843
INVESTIGATION OF THE VGASNGA COMPLEX IN GAAS BY THE POLARIZATION PHOTOLUMINESCENCE AND PIEZOSPECTROSCOPIC METHODS .2. PHENOMENON OF 2-STAGEALIGNMENT
Authors: GUTKIN AA RESHCHIKOV MA SOSNOVSKII VR
Citation: Aa. Gutkin et al., INVESTIGATION OF THE VGASNGA COMPLEX IN GAAS BY THE POLARIZATION PHOTOLUMINESCENCE AND PIEZOSPECTROSCOPIC METHODS .2. PHENOMENON OF 2-STAGEALIGNMENT, Semiconductors, 27(9), 1993, pp. 844-848
Risultati: 1-3 |