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Results: 1-25/62
Authors:
MANGAT PS
SOUKIASSIAN P
Citation: Ps. Mangat et P. Soukiassian, STRUCTURE OF PROTOTYPICAL SEMICONDUCTOR SURFACES AND INTERFACES INVESTIGATED BY PHOTOEMISSION EXTENDED X-RAY-ABSORPTION FINE-STRUCTURE (PEXAFS), Surface review and letters, 5(5), 1998, pp. 1057-1086
Authors:
SOUKIASSIAN P
LELAY G
VANHOVE MA
Citation: P. Soukiassian et al., SEMICONDUCTOR AND NONMETALLIC SUBSTRATES - CLEAN AND ADSORBATE-COVERED - PREFACE, Surface review and letters, 5(1), 1998, pp. 3-3
Authors:
SEMOND F
DOUILLARD L
SOUKIASSIAN P
MAYNE A
DUJARDIN G
DICIOCCIO L
JAUSSAUD C
Citation: F. Semond et al., SCANNING-TUNNELING-MICROSCOPY STUDY OF SINGLE-DOMAIN BETA-SIC(100) SURFACES - GROWTH AND MORPHOLOGY, Surface review and letters, 5(1), 1998, pp. 207-211
Authors:
DOUILLARD L
SEMOND F
SOUKIASSIAN P
DUNHAM D
AMY F
RIVILLON S
HURYCH Z
Citation: L. Douillard et al., COMPOSITION AND STRUCTURE OF BETA-SIC(100)-(2X2) SURFACES MONITORED BY PHOTOEMISSION SPECTROSCOPY USING SYNCHROTRON-RADIATION, Surface review and letters, 5(1), 1998, pp. 213-217
Authors:
ARISTOV VY
LELAY G
SOUKIASSIAN P
ZHILIN VM
GREHK GM
KIM HJ
JOHNSON RL
GIAMMICHELE C
Citation: Vy. Aristov et al., PHOTOEMISSION INVESTIGATION OF THE 2D ELECTRON-GAS CREATED AT THE INAS(110) SURFACE, Surface review and letters, 5(1), 1998, pp. 235-240
Authors:
MAYNE A
SEMOND F
DUJARDIN G
SOUKIASSIAN P
Citation: A. Mayne et al., ATOMIC-SCALE SELF-PROPAGATION OF A MOLECULAR REACTION ON A SEMICONDUCTOR SURFACE - O-2 BETA-SIC(100)-3X2/, Physical review. B, Condensed matter, 57(24), 1998, pp. 15108-15111
Authors:
PIZZAGALLI L
JOACHIM C
MAYNE A
DUJARDIN G
SEMOND F
DOUILLARD L
SOUKIASSIAN P
Citation: L. Pizzagalli et al., RECONSTRUCTION OF THE SI-TERMINATED BETA-SIC(100) SURFACE, Thin solid films, 318(1-2), 1998, pp. 136-139
Authors:
DOUILLARD L
ARISTOV VY
SEMOND F
SOUKIASSIAN P
Citation: L. Douillard et al., PAIRS OF SI ATOMIC LINES SELF-ASSEMBLING ON THE BETA-SIC(100) SURFACE- AN 8X2-RECONSTRUCTION, Surface science, 401(1), 1998, pp. 395-400
Authors:
ROY D
SOUKIASSIAN P
Citation: D. Roy et P. Soukiassian, UNDERSTANDING AND CONTROLLING SURFACES AN D INTERFACES - A KEY STEP IN THE DEVELOPMENT OF ADVANCED MATERIALS - PREFACE, Journal de physique. IV, 7(C6), 1997, pp. 5-5
Authors:
SOUKIASSIAN P
SEMOND F
Citation: P. Soukiassian et F. Semond, ADVANCES IN CUBIC SILICON-CARBIDE SURFACES AND SELF-ORGANIZED ONE-DIMENSIONAL SUB-NANOSCALE OBJECTS, Journal de physique. IV, 7(C6), 1997, pp. 101-113
Authors:
GUSEV AO
PAGET D
ARISTOV VY
SOUKIASSIAN P
BERKOVITS VL
THIERRYMIEG V
Citation: Ao. Gusev et al., COMBINED REFLECTANCE ANISOTROPY AND PHOTOEMISSION SPECTROSCOPIES OF CS GAAS(001) INTERFACE FORMATION/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(1), 1997, pp. 192-195
Authors:
GRUZZA B
BIDEUX L
MANGAT PS
SOUKIASSIAN P
Citation: B. Gruzza et al., A STUDY OF INP(100) SURFACE PASSIVATION BY ANTIMONY DEPOSITION, Synthetic metals, 90(3), 1997, pp. 223-227
Authors:
SOUKIASSIAN P
LELAY G
VANHOVE MA
Citation: P. Soukiassian et al., METAL AND ALLOY SUBSTRATES - CLEAN AND ADSORBATE-COVERED - PREFACE, Surface review and letters, 4(6), 1997, pp. 3-3
Authors:
SOUKIASSIAN P
LELAY G
VANHOVE MA
Citation: P. Soukiassian et al., UNTITLED - PREFACE, Surface review and letters, 4(5), 1997, pp. 3-3
Authors:
HIROSE Y
WU CI
ARISTOV V
SOUKIASSIAN P
KAHN A
Citation: Y. Hirose et al., CHEMISTRY AND ELECTRONIC-PROPERTIES OF METAL CONTACTS ON AN ORGANIC MOLECULAR SEMICONDUCTOR, Applied surface science, 114, 1997, pp. 291-298
Authors:
ARISTOV VY
DOUILLARD L
FAUCHOUX O
SOUKIASSIAN P
Citation: Vy. Aristov et al., TEMPERATURE-INDUCED SEMICONDUCTING C(4X2) DOUBLE-LEFT-RIGHT-ARROW METALLIC (2X1) REVERSIBLE PHASE-TRANSITION ON THE BETA-SIC(100) SURFACE, Physical review letters, 79(19), 1997, pp. 3700-3703
Authors:
SOUKIASSIAN P
SEMOND F
MAYNE A
DUJARDIN G
Citation: P. Soukiassian et al., HIGHLY STABLE SI ATOMIC LINE FORMATION ON THE BETA-SIC(100) SURFACE, Physical review letters, 79(13), 1997, pp. 2498-2501
Authors:
SOUKIASSIAN P
SEMOND F
DOUILLARD L
MAYNE A
DUJARDIN G
PIZZAGALLI L
JOACHIM C
Citation: P. Soukiassian et al., DIRECT OBSERVATION OF A BETA-SIC(100)-C(4X2) SURFACE RECONSTRUCTION, Physical review letters, 78(5), 1997, pp. 907-910
Authors:
SPIESS L
WIMMER E
SOUKIASSIAN P
Citation: L. Spiess et al., STRUCTURAL-PROPERTIES OF NA ADSORBED ON A GE(100)2X1 SURFACE - ALL-ELECTRON, AB-INITIO, DENSITY-FUNCTIONAL, CLUSTER CALCULATIONS, Applied surface science, 92, 1996, pp. 501-506
Authors:
ARISTOV VY
GREHK M
ZHILIN VM
TALEBIBRAHIMI A
INDLEKOFER G
HURYCH Z
LELAY G
SOUKIASSIAN P
Citation: Vy. Aristov et al., SB OR CS COVERED INAS(110) SURFACES - MOVING E(F) INTO CONDUCTION-BAND AND QUANTIZED 2D ELECTRON CHANNEL, Applied surface science, 104, 1996, pp. 73-78
Authors:
SEMOND F
SOUKIASSIAN P
MANGAT PS
HURYCH Z
DICIOCCIO L
JAUSSAUD C
Citation: F. Semond et al., SYNCHROTRON-RADIATION STUDY OF CS CARBON-RICH BETA-SIC(100) AND CS/SILICON-RICH BETA-SIC(100) SURFACES - METALLIZATION AND INTERFACE FORMATION/, Applied surface science, 104, 1996, pp. 79-87
Authors:
HIROSE Y
KAHN A
ARISTOV V
SOUKIASSIAN P
BULOVIC V
FORREST SR
Citation: Y. Hirose et al., CHEMISTRY AND ELECTRONIC-PROPERTIES OF METAL-ORGANIC SEMICONDUCTOR INTERFACES - AL, TI, IN, SN, AG, AND AU ON PTCDA, Physical review. B, Condensed matter, 54(19), 1996, pp. 13748-13758
Authors:
HUTTEL Y
SOUKIASSIAN P
MANGAT PS
HURYCH Z
Citation: Y. Huttel et al., ANTIMONY ON METAL AND SEMICONDUCTOR SURFACES - INTERFACE FORMATION AND PASSIVATION, Surface science, 352, 1996, pp. 845-849
Authors:
SEMOND F
SOUKIASSIAN P
MAYNE A
DUJARDIN G
DOUILLARD L
JAUSSAUD C
Citation: F. Semond et al., ATOMIC-STRUCTURE OF THE BETA-SIC(100)-(3X2) SURFACE, Physical review letters, 77(10), 1996, pp. 2013-2016
Authors:
HIROSE Y
KAHN A
ARISTOV V
SOUKIASSIAN P
Citation: Y. Hirose et al., CHEMISTRY, DIFFUSION, AND ELECTRONIC-PROPERTIES OF A METAL ORGANIC SEMICONDUCTOR CONTACT - IN/PERYLENETETRACARBOXYLIC DIANHYDRIDE/, Applied physics letters, 68(2), 1996, pp. 217-219