Citation: C. Kim et al., LOCAL STRAIN RELAXATION IN SI0.7GE0.3 ON SI(001) INDUCED BY GA+ IRRADIATION, Journal of applied physics, 83(12), 1998, pp. 7608-7612
Authors:
KIM H
TAYLOR N
SPILA T
GLASS G
PARK SY
GREENE JE
ABELSON JR
Citation: H. Kim et al., STRUCTURE OF THE SI(011)-(16X2) SURFACE AND HYDROGEN DESORPTION-KINETICS INVESTIGATED USING TEMPERATURE-PROGRAMMED DESORPTION, Surface science, 380(2-3), 1997, pp. 496-500
Authors:
LU Q
SARDELA MR
TAYLOR N
GLASS G
BRAMBLETT TR
SPILA T
ABELSON JR
GREENE JR
Citation: Q. Lu et al., B INCORPORATION AND HOLE TRANSPORT IN FULLY STRAINED HETEROEPITAXIAL SI1-XGEX GROWN ON SI(001) BY GAS-SOURCE MBE FROM SI2H6, GE2H6, AND B2H6, Journal of crystal growth, 179(1-2), 1997, pp. 97-107
Authors:
KIM H
GLASS G
SPILA T
TAYLOR N
PARK SY
ABELSON JR
GREENE JE
Citation: H. Kim et al., SI(001)-B GAS-SOURCE MOLECULAR-BEAM EPITAXY - BORON SURFACE SEGREGATION AND ITS EFFECT ON FILM GROWTH-KINETICS, Journal of applied physics, 82(5), 1997, pp. 2288-2297
Authors:
KIM H
GLASS G
PARK SY
SPILA T
TAYLOR N
ABELSON JR
GREENE JE
Citation: H. Kim et al., EFFECTS OF B DOPING ON HYDROGEN DESORPTION FROM SI(001) DURING GAS-SOURCE MOLECULAR-BEAM EPITAXY FROM SI2H6 AND B2H6, Applied physics letters, 69(25), 1996, pp. 3869-3871