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Results: 1-25 | 26-27
Results: 1-25/27
FABRICATION OF HETEROJUNCTION BIPOLAR-TRANSISTORS WITH BURIED SUBCOLLECTOR LAYERS FOR REDUCTION OF BASE-COLLECTOR CAPACITANCE BY MOLECULAR-BEAM EPITAXY REGROWTH
Authors: MICOVIC M NORDQUIST CD LUBYSHEV D MAYER TS MILLER DL STREATER RW SPRINGTHORPE AJ
Citation: M. Micovic et al., FABRICATION OF HETEROJUNCTION BIPOLAR-TRANSISTORS WITH BURIED SUBCOLLECTOR LAYERS FOR REDUCTION OF BASE-COLLECTOR CAPACITANCE BY MOLECULAR-BEAM EPITAXY REGROWTH, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 962-967
GAAS ALGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH A BASE DOPING 10(20) CM(-3) GROWN BY SOLID-SOURCE MOLECULAR-BEAM EPITAXY USING CBR4/
Authors: MICOVIC M NORDQUIST C LUBYSHEV D MAYER TS MILLER DL STREATER RW SPRINGTHORPE AJ
Citation: M. Micovic et al., GAAS ALGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH A BASE DOPING 10(20) CM(-3) GROWN BY SOLID-SOURCE MOLECULAR-BEAM EPITAXY USING CBR4/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 972-976
EXPERIMENTAL-STUDY OF LCI LASERS FABRICATED BY SINGLE MOCVD OVERGROWTH FOLLOWED BY SELECTIVE DOPANT DIFFUSION
Authors: SARGENT EH SUDA DA MARGITTAI A SHEPHERD FR CLEROUX M KNIGHT G PUETZ N MAKINO T SPRINGTHORPE AJ CHIK G XU JM
Citation: Eh. Sargent et al., EXPERIMENTAL-STUDY OF LCI LASERS FABRICATED BY SINGLE MOCVD OVERGROWTH FOLLOWED BY SELECTIVE DOPANT DIFFUSION, IEEE photonics technology letters, 10(11), 1998, pp. 1536-1538
TEMPERATURE EFFECTS IN SEMICONDUCTOR QUANTUM-DOT LASERS
Authors: FAFARD S HINZER K SPRINGTHORPE AJ FENG Y MCCAFFREY J CHARBONNEAU S GRISWOLD EM
Citation: S. Fafard et al., TEMPERATURE EFFECTS IN SEMICONDUCTOR QUANTUM-DOT LASERS, Materials science & engineering. B, Solid-state materials for advanced technology, 51(1-3), 1998, pp. 114-117
NEW PHOTOLUMINESCENCE TRANSITION IN GAAS INVOLVING D- STATES
Authors: HARRISON DA WATKINS SP THEWALT MLW BECKETT DJS SPRINGTHORPE AJ
Citation: Da. Harrison et al., NEW PHOTOLUMINESCENCE TRANSITION IN GAAS INVOLVING D- STATES, Physical review letters, 80(11), 1998, pp. 2461-2464
LATTICE-PARAMETER VARIATION IN DOPED GAAS SUBSTRATES DETERMINED USINGHIGH-RESOLUTION PHOTOLUMINESCENCE SPECTROSCOPY
Authors: HU J HARRISON DA KARASYUK VA WATKINS SP THEWALT MLW BASSIGNANA IC BECKETT DJS HILLIER GC SPRINGTHORPE AJ
Citation: J. Hu et al., LATTICE-PARAMETER VARIATION IN DOPED GAAS SUBSTRATES DETERMINED USINGHIGH-RESOLUTION PHOTOLUMINESCENCE SPECTROSCOPY, Journal of applied physics, 84(11), 1998, pp. 6305-6311
SENSOR CONTROLLED LINEAR MOTION OVEN (S-LIMO) FOR GROUP-III FLUX OPERATION
Authors: CHOW PP EVANS KR SPRINGTHORPE AJ FISHER P KLAASSEN JJ WOWCHAK A VANHOVE J
Citation: Pp. Chow et al., SENSOR CONTROLLED LINEAR MOTION OVEN (S-LIMO) FOR GROUP-III FLUX OPERATION, Journal of crystal growth, 175, 1997, pp. 61-65
DETERMINATION OF ALXGA(1-X)AS COMPOSITION - THE MBE PERSPECTIVE
Authors: WASILEWSKI ZR DION MM LOCKWOOD DJ POOLE P STREATER RW SPRINGTHORPE AJ
Citation: Zr. Wasilewski et al., DETERMINATION OF ALXGA(1-X)AS COMPOSITION - THE MBE PERSPECTIVE, Journal of crystal growth, 175, 1997, pp. 238-243
IODINE-ASSISTED MOLECULAR-BEAM EPITAXY
Authors: MICOVIC M LUBYSHEV D CAI WZ FLACK F STREATER RW SPRINGTHORPE AJ MILLER DL
Citation: M. Micovic et al., IODINE-ASSISTED MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 175, 1997, pp. 428-434
COMPOSITION OF ALGAAS
Authors: WASILEWSKI ZR DION MM LOCKWOOD DJ POOLE P STREATER RW SPRINGTHORPE AJ
Citation: Zr. Wasilewski et al., COMPOSITION OF ALGAAS, Journal of applied physics, 81(4), 1997, pp. 1683-1694
LARGE PHOTOLUMINESCENCE ENHANCEMENTS FROM EPITAXIAL GAAS PASSIVATED BY POSTGROWTH PHOSPHIDIZATION
Authors: HARRISON DA ARES R WATKINS SP THEWALT MLW BOLOGNESI CR BECKETT DJS SPRINGTHORPE AJ
Citation: Da. Harrison et al., LARGE PHOTOLUMINESCENCE ENHANCEMENTS FROM EPITAXIAL GAAS PASSIVATED BY POSTGROWTH PHOSPHIDIZATION, Applied physics letters, 70(24), 1997, pp. 3275-3277
ENHANCEMENT OF 2ND-HARMONIC GENERATION AT 1,06 MU-M USING A QUASI-PHASE-MATCHED ALGAAS GAAS ASYMMETRIC QUANTUM-WELL STRUCTURE (VOL 65, PG 3176, 1994)/
Authors: QU XH RUDA H JANZ S SPRINGTHORPE AJ
Citation: Xh. Qu et al., ENHANCEMENT OF 2ND-HARMONIC GENERATION AT 1,06 MU-M USING A QUASI-PHASE-MATCHED ALGAAS GAAS ASYMMETRIC QUANTUM-WELL STRUCTURE (VOL 65, PG 3176, 1994)/, Applied physics letters, 68(5), 1996, pp. 723-723
ORDERED AND RANDOMLY DISORDERED ALAS GAAS SHORT-PERIOD SUPERLATTICES/
Authors: ARENT DJ ALONSO R HORNER G BODE M OLSON JM YIN X DELONG MC SPRINGTHORPE AJ MAJEED A
Citation: Dj. Arent et al., ORDERED AND RANDOMLY DISORDERED ALAS GAAS SHORT-PERIOD SUPERLATTICES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(2), 1994, pp. 1009-1012
SELF-TIMED INTEGRATED-OPTICAL SERIAL-TO-PARALLEL CONVERTER FOR 100 GBIT S TIME DEMULTIPLEXING/
Authors: TAN RK VERBER CM SPRINGTHORPE AJ
Citation: Rk. Tan et al., SELF-TIMED INTEGRATED-OPTICAL SERIAL-TO-PARALLEL CONVERTER FOR 100 GBIT S TIME DEMULTIPLEXING/, IEEE photonics technology letters, 6(10), 1994, pp. 1228-1231
SELF-TIMED INTEGRATED-OPTICAL SERIAL-TO-PARALLEL CONVERTER FOR 100 GBIT S TIME DEMULTIPLEXING/
Authors: TAN RK VERBER CM SPRINGTHORPE AJ
Citation: Rk. Tan et al., SELF-TIMED INTEGRATED-OPTICAL SERIAL-TO-PARALLEL CONVERTER FOR 100 GBIT S TIME DEMULTIPLEXING/, IEEE photonics technology letters, 6(10), 1994, pp. 1228-1231
OPTOELECTRONIC INTEGRATION OF A GAAS ALGAAS BISTABLE FIELD-EFFECT TRANSISTOR (BISFET) AND LED/
Authors: OJHA JJ SIMMONS JG MAND RS SPRINGTHORPE AJ
Citation: Jj. Ojha et al., OPTOELECTRONIC INTEGRATION OF A GAAS ALGAAS BISTABLE FIELD-EFFECT TRANSISTOR (BISFET) AND LED/, IEEE electron device letters, 15(2), 1994, pp. 57-59
2ND-HARMONIC GENERATION FROM A GAAS AL1-XGAXAS ASYMMETRIC QUANTUM-WELL STRUCTURE/
Authors: QU XHH BOTTOMLEY DJ RUDA H SPRINGTHORPE AJ
Citation: Xhh. Qu et al., 2ND-HARMONIC GENERATION FROM A GAAS AL1-XGAXAS ASYMMETRIC QUANTUM-WELL STRUCTURE/, Physical review. B, Condensed matter, 50(8), 1994, pp. 5703-5706
OPTICAL-PROPERTIES OF ORDERED AND RANDOMLY DISORDERED ALAS GAAS SHORT-PERIOD SUPERLATTICES/
Authors: ARENT DJ ALONSO RG HORNER GS LEVI D BODE M MASCARENHAS A OLSON JM YIN X DELONG MC SPRINGTHORPE AJ MAJEED A MOWBRAY DJ SKOLNICK MS
Citation: Dj. Arent et al., OPTICAL-PROPERTIES OF ORDERED AND RANDOMLY DISORDERED ALAS GAAS SHORT-PERIOD SUPERLATTICES/, Physical review. B, Condensed matter, 49(16), 1994, pp. 11173-11184
THE EFFECT OF EMITTER LAYER VARIATIONS ON THE CURRENT GAIN OF ALGAAS-GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN BY CHEMICAL BEAM EPITAXY
Authors: MOORE WT SPRINGTHORPE AJ LESTER TP EICHER S SURRIDGE RK HU J MINER CJ
Citation: Wt. Moore et al., THE EFFECT OF EMITTER LAYER VARIATIONS ON THE CURRENT GAIN OF ALGAAS-GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN BY CHEMICAL BEAM EPITAXY, Journal of crystal growth, 136(1-4), 1994, pp. 230-234
INSIGHT INTO CRITERIA FOR DESIGN OPTIMIZATION OF BISTABLE FIELD-EFFECT TRANSISTOR (BISFET)
Authors: OJHA JJ SIMMONS JG MAND RS SPRINGTHORPE AJ
Citation: Jj. Ojha et al., INSIGHT INTO CRITERIA FOR DESIGN OPTIMIZATION OF BISTABLE FIELD-EFFECT TRANSISTOR (BISFET), Electronics Letters, 30(10), 1994, pp. 822-823
SILICON SPIKES AND IMPURITY ACCUMULATION AT INTERRUPTED GROWTH INTERFACES DURING MOLECULAR-BEAM EPITAXY
Authors: SPRINGTHORPE AJ MOORE WT MAJEED A STREATER RW
Citation: Aj. Springthorpe et al., SILICON SPIKES AND IMPURITY ACCUMULATION AT INTERRUPTED GROWTH INTERFACES DURING MOLECULAR-BEAM EPITAXY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(4), 1993, pp. 1275-1280
HOT-ELECTRON COOLING IN PARABOLIC AND MODULATION-DOPED QUANTUM-WELLS AND DOPED SUPERLATTICES
Authors: ARENT DJ SZMYD D HANNA MC JONES KM NOZIK AJ SPRINGTHORPE AJ MAJEED A
Citation: Dj. Arent et al., HOT-ELECTRON COOLING IN PARABOLIC AND MODULATION-DOPED QUANTUM-WELLS AND DOPED SUPERLATTICES, Superlattices and microstructures, 13(4), 1993, pp. 459-468
REALIZATION OF AN N-CHANNEL GAAS ALGAAS BISTABLE FIELD-EFFECT TRANSISTOR (BISFET)/
Authors: OJHA JJ SIMMONS JG MAND RS SPRINGTHORPE AJ
Citation: Jj. Ojha et al., REALIZATION OF AN N-CHANNEL GAAS ALGAAS BISTABLE FIELD-EFFECT TRANSISTOR (BISFET)/, IEEE electron device letters, 14(8), 1993, pp. 385-387
OPTICAL AND ELECTRICAL OSCILLATIONS IN DOUBLE-HETEROJUNCTION NEGATIVEDIFFERENTIAL RESISTANCE DEVICES
Authors: KOVACIC SJ OJHA JJ SIMMONS JG JESSOP PE MAND RS SPRINGTHORPE AJ
Citation: Sj. Kovacic et al., OPTICAL AND ELECTRICAL OSCILLATIONS IN DOUBLE-HETEROJUNCTION NEGATIVEDIFFERENTIAL RESISTANCE DEVICES, I.E.E.E. transactions on electron devices, 40(6), 1993, pp. 1154-1160
TRANSPARENT OPTICAL SIGNAL REGENERATION USING A NONLINEAR BISTABLE DEVICE
Authors: CADA M HE J ROLLAND C SPRINGTHORPE AJ
Citation: M. Cada et al., TRANSPARENT OPTICAL SIGNAL REGENERATION USING A NONLINEAR BISTABLE DEVICE, Electronics Letters, 29(18), 1993, pp. 1631-1632
Risultati: 1-25 | 26-27