Authors: PERRIN SD SELTZER CP SPURDENS PC

Citation: Sd. Perrin et al., HIGH-QUALITY COMPRESSIVELY STRAINED INP-BASED GAINAS(P) GAINASP MULTIQUANTUM-WELL LASER STRUCTURES GROWN BY METALORGANIC VAPOR-PHASE EPITAXY/, Journal of electronic materials, 23(2), 1994, pp. 81-85

Authors: DUNCAN WJ ALI ASM MARSH EM SPURDENS PC

Citation: Wj. Duncan et al., METALORGANIC VAPOR-PHASE EPITAXY GROWTH OF INPASSB ALLOYS LATTICE-MATCHED TO INAS, Journal of crystal growth, 143(3-4), 1994, pp. 155-161

Authors: HARLOW MJ DUNCAN WJ LEALMAN IF SPURDENS PC

Citation: Mj. Harlow et al., CHROMIUM-DOPED SEMIINSULATING INP GROWN BY METALORGANIC VAPOR-PHASE EPITAXY, Journal of crystal growth, 140(1-2), 1994, pp. 19-27

Authors: SELTZER CP PERRIN SD HARLOW MJ STUDD R SPURDENS PC

Citation: Cp. Seltzer et al., LONG-TERM RELIABILITY OF STRAIN-COMPENSATED INGAAS(P) INP MQW BH LASERS/, Electronics Letters, 30(3), 1994, pp. 227-229

Authors: SPURDENS PC SALTER MA HARLOW MJ NEWSON DJ

Citation: Pc. Spurdens et al., CONTROL OF PARALLEL CONDUCTION IN MOVPE GROWN INP BASED HFETS, Electronics Letters, 30(17), 1994, pp. 1453-1455

Authors: WITTGREFFE JP YATES MJ PERRIN SD SPURDENS PC

Citation: Jp. Wittgreffe et al., INTERFACE BROADENING IN AS-GROWN MOVPE INP GAINAS MQW STRUCTURES - DOMINANT INTERMIXING OF GROUP-V ELEMENTS DIRECTLY REVEALED BY AUGER ANALYSIS OF A CHEMICALLY BEVELED SECTION/, Journal of crystal growth, 130(1-2), 1993, pp. 51-58