Citation: M. Stavrev et al., STUDY OF TA(N,O) DIFFUSION BARRIER STABILITY - ANALYTICAL AND ELECTRICAL CHARACTERIZATION OF LOW-LEVEL CU CONTAMINATION IN SI, Microelectronic engineering, 37-8(1-4), 1997, pp. 245-251
Authors:
STAVREV M
FISCHER D
PREUSS A
WENZEL C
MATTERN N
Citation: M. Stavrev et al., STUDY OF NANOCRYSTALLINE TA(N,O) DIFFUSION-BARRIERS FOR USE IN CU METALLIZATION, Microelectronic engineering, 33(1-4), 1997, pp. 269-275
Authors:
FISCHER D
MEISSNER O
BENDJUS B
SCHREIBER J
STAVREV M
WENZEL C
Citation: D. Fischer et al., AFM CHARACTERIZATION OF TA-BASED DIFFUSION-BARRIERS FOR USE IN FUTURESEMICONDUCTOR METALLIZATION, Surface and interface analysis, 25(7-8), 1997, pp. 522-528
Authors:
STAVREV M
FISCHER D
WENZEL C
DRESCHER K
MATTERN N
Citation: M. Stavrev et al., CRYSTALLOGRAPHIC AND MORPHOLOGICAL CHARACTERIZATION OF REACTIVELY SPUTTERED TA, TA-N AND TA-N-O THIN-FILMS, Thin solid films, 307(1-2), 1997, pp. 79-88
Citation: M. Stavrev et al., SPUTTERING OF TANTALUM-BASED DIFFUSION-BARRIERS IN SI CU METALLIZATION - EFFECTS OF GAS-PRESSURE AND COMPOSITION/, Applied surface science, 91(1-4), 1995, pp. 257-262