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Results: 1-8 |
Results: 8

Authors: VANDALEN R STAVRINOU PN
Citation: R. Vandalen et Pn. Stavrinou, GENERAL RULES FOR CONSTRUCTING VALENCE-BAND EFFECTIVE-MASS HAMILTONIANS WITH CORRECT OPERATOR ORDER FOR HETEROSTRUCTURES WITH ARBITRARY ORIENTATIONS, Semiconductor science and technology, 13(1), 1998, pp. 11-17

Authors: STREET AM STAVRINOU PN OBRIEN DC EDWARDS DJ
Citation: Am. Street et al., INDOOR OPTICAL WIRELESS SYSTEMS - A REVIEW, Optical and quantum electronics, 29(3), 1997, pp. 349-378

Authors: STAVRINOU PN VANDALEN R
Citation: Pn. Stavrinou et R. Vandalen, OPERATOR ORDERING AND BOUNDARY-CONDITIONS FOR VALENCE-BAND MODELING -APPLICATION TO [110]HETEROSTRUCTURES, Physical review. B, Condensed matter, 55(23), 1997, pp. 15456-15459

Authors: KINDER D NICHOLAS RJ STAVRINOU PN HAYWOOD SK HART L HOPKINSON M DAVID JPR HILL G
Citation: D. Kinder et al., PHOTOCONDUCTIVITY STUDIES OF INASP INP HETEROSTRUCTURES IN APPLIED MAGNETIC AND ELECTRIC-FIELDS/, Semiconductor science and technology, 11(1), 1996, pp. 34-38

Authors: WANG H LIKAMWA P GHISONI M PARRY G STAVRINOU PN ROBERTS C MILLER A
Citation: H. Wang et al., ULTRAFAST RECOVERY-TIME IN A STRAINED INGAAS-ALAS P-I-N MODULATOR, IEEE photonics technology letters, 7(2), 1995, pp. 173-175

Authors: DAVID JPR HOPKINSON M STAVRINOU PN HAYWOOD SK
Citation: Jpr. David et al., GROWTH OF INASXP1-X INP MULTIQUANTUM-WELL STRUCTURES BY SOLID SOURCE MOLECULAR-BEAM EPITAXY/, Journal of applied physics, 78(5), 1995, pp. 3330-3334

Authors: GHISONI M PARRY G HART L ROBERTS C MARINOPOULOU A STAVRINOU PN
Citation: M. Ghisoni et al., EFFECT OF WELL BARRIER RATIO ON THE PERFORMANCE OF STRAINED INGAAS/GAAS QUANTUM-WELL MODULATORS/, Electronics Letters, 30(24), 1994, pp. 2067-2069

Authors: STAVRINOU PN HAYWOOD SK PARRY G
Citation: Pn. Stavrinou et al., USE OF A 3-LAYER QUANTUM-WELL STRUCTURE TO ACHIEVE AN ABSORPTION-EDGEBLUESHIFT, Applied physics letters, 64(10), 1994, pp. 1251-1253
Risultati: 1-8 |