Authors: MARTINI T STEINKIRCHNER J GOSELE U

Citation: T. Martini et al., THE CRACK OPENING METHOD IN SILICON-WAFER BONDING - HOW USEFUL IS IT, Journal of the Electrochemical Society, 144(1), 1997, pp. 354-357

Authors: STEINKIRCHNER J MARTINI T REICHE M KASTNER G GOSELE U

Citation: J. Steinkirchner et al., SILICON-WAFER BONDING VIA DESIGNED MONOLAYERS, Advanced materials, 7(7), 1995, pp. 662-665

Authors: TONG QY KAIDO G TONG L REICHE M SHI F STEINKIRCHNER J TAN TY GOSELE U

Citation: Qy. Tong et al., A SIMPLE CHEMICAL TREATMENT FOR PREVENTING THERMAL BUBBLES IN SILICON-WAFER BONDING, Journal of the Electrochemical Society, 142(10), 1995, pp. 201-203

Authors: GOSELE U STENZEL H MARTINI T STEINKIRCHNER J CONRAD D SCHEERSCHMIDT K

Citation: U. Gosele et al., SELF-PROPAGATING ROOM-TEMPERATURE SILICON-WAFER BONDING IN ULTRAHIGH-VACUUM, Applied physics letters, 67(24), 1995, pp. 3614-3616