Citation: T. Martini et al., THE CRACK OPENING METHOD IN SILICON-WAFER BONDING - HOW USEFUL IS IT, Journal of the Electrochemical Society, 144(1), 1997, pp. 354-357
Authors:
TONG QY
KAIDO G
TONG L
REICHE M
SHI F
STEINKIRCHNER J
TAN TY
GOSELE U
Citation: Qy. Tong et al., A SIMPLE CHEMICAL TREATMENT FOR PREVENTING THERMAL BUBBLES IN SILICON-WAFER BONDING, Journal of the Electrochemical Society, 142(10), 1995, pp. 201-203
Authors:
GOSELE U
STENZEL H
MARTINI T
STEINKIRCHNER J
CONRAD D
SCHEERSCHMIDT K
Citation: U. Gosele et al., SELF-PROPAGATING ROOM-TEMPERATURE SILICON-WAFER BONDING IN ULTRAHIGH-VACUUM, Applied physics letters, 67(24), 1995, pp. 3614-3616