AAAAAA

   
Results: 1-10 |
Results: 10
CARBON NANOSTRUCTURES - DIAMOND NUCLEATION CENTERS FORMED DURING THE BIAS PRETREATMENT
Authors: STOCKEL R JANISCHOWSKY K STAMMLER M LEY L ALBRECHT M STRUNK HP
Citation: R. Stockel et al., CARBON NANOSTRUCTURES - DIAMOND NUCLEATION CENTERS FORMED DURING THE BIAS PRETREATMENT, DIAMOND AND RELATED MATERIALS, 7(2-5), 1998, pp. 147-151
RELIABILITY OF EPIDURAL PRESSURE MEASUREMENT IN CLINICAL-PRACTICE - BEHAVIOR OF 3 MODERN SENSORS DURING SIMULTANEOUS IPSILATERAL INTRAVENTRICULAR OR INTRAPARENCHYMAL PRESSURE MEASUREMENT
Authors: RAABE A TOTZAUER R MEYER O STOCKEL R HOHREIN D SCHOCHE J
Citation: A. Raabe et al., RELIABILITY OF EPIDURAL PRESSURE MEASUREMENT IN CLINICAL-PRACTICE - BEHAVIOR OF 3 MODERN SENSORS DURING SIMULTANEOUS IPSILATERAL INTRAVENTRICULAR OR INTRAPARENCHYMAL PRESSURE MEASUREMENT, Neurosurgery, 43(2), 1998, pp. 306-311
RELIABILITY OF INTRAVENTRICULAR PRESSURE MEASUREMENT WITH FIBEROPTIC OR SOLID-STATE TRANSDUCERS - AVOIDANCE OF A METHODOLOGICAL ERROR
Authors: RAABE A STOCKEL R HOHREIN D SCHOCHE J
Citation: A. Raabe et al., RELIABILITY OF INTRAVENTRICULAR PRESSURE MEASUREMENT WITH FIBEROPTIC OR SOLID-STATE TRANSDUCERS - AVOIDANCE OF A METHODOLOGICAL ERROR, Neurosurgery, 42(1), 1998, pp. 74-79
DIAMOND NUCLEATION UNDER BIAS CONDITIONS
Authors: STOCKEL R STAMMLER M JANISCHOWSKY K LEY L ALBRECHT M STRUNK HP
Citation: R. Stockel et al., DIAMOND NUCLEATION UNDER BIAS CONDITIONS, Journal of applied physics, 83(1), 1998, pp. 531-539
DIAMOND NUCLEATION ON SILICON DURING BIAS TREATMENT IN CHEMICAL-VAPOR-DEPOSITION AS ANALYZED BY ELECTRON-MICROSCOPY
Authors: STAMMLER M STOCKEL R LEY L ALBRECHT M STRUNK HP
Citation: M. Stammler et al., DIAMOND NUCLEATION ON SILICON DURING BIAS TREATMENT IN CHEMICAL-VAPOR-DEPOSITION AS ANALYZED BY ELECTRON-MICROSCOPY, DIAMOND AND RELATED MATERIALS, 6(5-7), 1997, pp. 747-751
THE INFLUENCE OF DIAMOND CHEMICAL-VAPOR-DEPOSITION COATING PARAMETERSON THE MICROSTRUCTURE AND PROPERTIES OF TITANIUM SUBSTRATES
Authors: HEINRICH G GROGLER T ROSIWAL SM SINGER RF STOCKEL R LEY L
Citation: G. Heinrich et al., THE INFLUENCE OF DIAMOND CHEMICAL-VAPOR-DEPOSITION COATING PARAMETERSON THE MICROSTRUCTURE AND PROPERTIES OF TITANIUM SUBSTRATES, DIAMOND AND RELATED MATERIALS, 5(3-5), 1996, pp. 304-307
DIAMOND GROWTH DURING BIAS PRETREATMENT IN THE MICROWAVE CVD OF DIAMOND
Authors: STOCKEL R JANISCHOWSKY K ROHMFELD S RISTEIN J HUNDHAUSEN M LEY L
Citation: R. Stockel et al., DIAMOND GROWTH DURING BIAS PRETREATMENT IN THE MICROWAVE CVD OF DIAMOND, DIAMOND AND RELATED MATERIALS, 5(3-5), 1996, pp. 321-325
GROWTH OF DIAMOND ON SILICON DURING THE BIAS PRETREATMENT IN CHEMICAL-VAPOR-DEPOSITION OF POLYCRYSTALLINE DIAMOND FILMS
Authors: STOCKEL R JANISCHOWSKY K ROHMFELD S RISTEIN J HUNDHAUSEN M LEY L
Citation: R. Stockel et al., GROWTH OF DIAMOND ON SILICON DURING THE BIAS PRETREATMENT IN CHEMICAL-VAPOR-DEPOSITION OF POLYCRYSTALLINE DIAMOND FILMS, Journal of applied physics, 79(2), 1996, pp. 768-775
THE INFLUENCE OF SURFACE-TREATMENT ON THE ELECTRONIC-STRUCTURE OF CVDDIAMOND FILMS
Authors: GRAUPNER R STOCKEL R JANISCHOWSKI K RISTEIN J HUNDHAUSEN M LEY L
Citation: R. Graupner et al., THE INFLUENCE OF SURFACE-TREATMENT ON THE ELECTRONIC-STRUCTURE OF CVDDIAMOND FILMS, DIAMOND AND RELATED MATERIALS, 3(4-6), 1994, pp. 891-895
INITIAL-STAGES IN THE GROWTH OF POLYCRYSTALLINE DIAMOND ON SILICON
Authors: STOCKEL R GRAUPNER R JANISCHOWSKY K XU S RISTEIN J HUNDHAUSEN M LEY L
Citation: R. Stockel et al., INITIAL-STAGES IN THE GROWTH OF POLYCRYSTALLINE DIAMOND ON SILICON, DIAMOND AND RELATED MATERIALS, 2(12), 1993, pp. 1467-1472
Risultati: 1-10 |