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Results:
1-15
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Results: 15
Authors:
BOSKER G
STOLWIJK NA
THORDSON JV
SODERVALL U
ANDERSSON TG
Citation: G. Bosker et al., DIFFUSION OF NITROGEN FROM A BURIED DOPING LAYER IN GALLIUM-ARSENIDE REVEALING THE PROMINENT ROLE OF AS INTERSTITIALS, Physical review letters, 81(16), 1998, pp. 3443-3446
Authors:
LERCH W
STOLWIJK NA
Citation: W. Lerch et Na. Stolwijk, DIFFUSION OF GOLD IN SILICON DURING RAPID THERMAL ANNEALING - EFFECTIVENESS OF THE SURFACE AS A SINK FOR SELF-INTERSTITIALS, Journal of applied physics, 83(3), 1998, pp. 1312-1320
Authors:
GIESE A
BRACHT H
STOLWIJK NA
WALTON JT
Citation: A. Giese et al., OUT-DIFFUSION OF ZN FROM SI - A METHOD TO STUDY VACANCY PROPERTIES INSI, Journal of applied physics, 83(12), 1998, pp. 8062-8064
Authors:
VOSS S
BRACHT H
STOLWIJK NA
KRINGHOJ P
LARSEN AN
Citation: S. Voss et al., ENERGY-LEVELS OF ZN IN SI1-XGEX ALLOYS, Applied physics letters, 73(16), 1998, pp. 2331-2333
Authors:
WENWER F
GUDE A
RUMMEL G
EGGERSMANN M
ZUMKLEY T
STOLWIJK NA
MEHRER H
Citation: F. Wenwer et al., A UNIVERSAL ION-BEAM-SPUTTERING DEVICE FOR DIFFUSION STUDIES, Measurement science & technology, 7(4), 1996, pp. 632-640
Authors:
STOLWIJK NA
POISSON C
BERNARDINI J
Citation: Na. Stolwijk et al., SEGREGATION-CONTROLLED KINETICS OF FAST IMPURITY DIFFUSION IN POLYCRYSTALLINE SOLIDS, Journal of physics. Condensed matter, 8(32), 1996, pp. 5843-5856
Authors:
POISSON C
ROLLAND A
BERNARDINI J
STOLWIJK NA
Citation: C. Poisson et al., DIFFUSION OF GOLD INTO POLYCRYSTALLINE SILICON INVESTIGATED BY MEANS OF THE RADIOTRACER AU-195, Journal of applied physics, 80(11), 1996, pp. 6179-6187
Authors:
LERCH W
STOLWIJK NA
MEHRER H
POISSON C
Citation: W. Lerch et al., DIFFUSION OF PLATINUM INTO DISLOCATED AND NON-DISLOCATED SILICON, Semiconductor science and technology, 10(9), 1995, pp. 1257-1263
Authors:
BOSKER G
HETTWER HG
RUCKI A
STOLWIJK NA
MEHRER H
JAGER W
URBAN K
Citation: G. Bosker et al., THE INFLUENCE OF PHOSPHORUS, ARSENIC AND ANTIMONY VAPOR AMBIENTS ON THE DIFFUSION OF ZINC INTO GALLIUM-ARSENIDE, Materials chemistry and physics, 42(1), 1995, pp. 68-71
Authors:
BRACHT H
STOLWIJK NA
MEHRER H
Citation: H. Bracht et al., PROPERTIES OF INTRINSIC POINT-DEFECTS IN SILICON DETERMINED BY ZINC DIFFUSION EXPERIMENTS UNDER NONEQUILIBRIUM CONDITIONS, Physical review. B, Condensed matter, 52(23), 1995, pp. 16542-16560
Authors:
BOSKER G
STOLWIJK NA
HETTWER HG
RUCKI A
JAGER W
SODERVALL U
Citation: G. Bosker et al., USE OF ZINC DIFFUSION INTO GAAS FOR DETERMINING PROPERTIES OF GALLIUMINTERSTITIALS, Physical review. B, Condensed matter, 52(16), 1995, pp. 11927-11931
Authors:
WITTORF D
RUCKI A
JAGER W
DIXON RH
URBAN K
HETTWER HG
STOLWIJK NA
MEHRER H
Citation: D. Wittorf et al., EVIDENCE OF POINT-DEFECT SUPERSATURATION DURING ZN DIFFUSION IN INP SINGLE-CRYSTALS, Journal of applied physics, 77(6), 1995, pp. 2843-2845
Authors:
LERCH W
STOLWIJK NA
MEHRER H
Citation: W. Lerch et al., A NOVEL DEVICE FOR SHORT-TIME DIFFUSION ANNEALING, Measurement science & technology, 5(7), 1994, pp. 835-841
Authors:
JAGER W
RUCKI A
URBAN K
HETTWER HG
STOLWIJK NA
MEHRER H
TAN TY
Citation: W. Jager et al., FORMATION OF VOID GA-PRECIPITATE PAIRS DURING ZN DIFFUSION INTO GAAS - THE COMPETITION OF 2 THERMODYNAMIC DRIVING FORCES, Journal of applied physics, 74(7), 1993, pp. 4409-4422
Authors:
ROLLERT F
STOLWIJK NA
MEHRER H
Citation: F. Rollert et al., DIFFUSION OF S-35 INTO SILICON USING AN ELEMENTAL VAPOR SOURCE, Applied physics letters, 63(4), 1993, pp. 506-508
Risultati:
1-15
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