Authors: STORK JMC

Citation: Jmc. Stork, TECHNOLOGY LEVERAGE FOR ULTRA-LOW POWER INFORMATION-SYSTEMS, Proceedings of the IEEE, 83(4), 1995, pp. 607-618

Authors: CRESSLER JD RICHEY DM JAEGER RC CRABBE EF COMFORT JH STORK JMC

Citation: Jd. Cressler et al., HIGH-INJECTION BARRIER EFFECTS IN SIGE HBTS OPERATING AT CRYOGENIC TEMPERATURES, Journal de physique. IV, 4(C6), 1994, pp. 117-122

Authors: CRESSLER JD CRABBE EF COMFORT JH SUN JYC STORK JMC

Citation: Jd. Cressler et al., AN EPITAXIAL EMITTER-CAP SIGE-BASE BIPOLAR TECHNOLOGY OPTIMIZED FOR LIQUID-NITROGEN TEMPERATURE OPERATION, IEEE electron device letters, 15(11), 1994, pp. 472-474

Authors: MEYERSOIN BS SMAIL KE HARAME DL LEGOUES FK STORK JMC

Citation: Bs. Meyersoin et al., UHVCVD GROWTH OF SI SIGE HETEROSTRUCTURES AND THEIR APPLICATIONS/, Semiconductor science and technology, 9(11), 1994, pp. 2005-2010

Authors: VERDONCKTVANDEBROEK S CRABBE EF MEYERSON BS HARAME DL RESTLE PJ STORK JMC JOHNSON JB

Citation: S. Verdoncktvandebroek et al., SIGE-CHANNEL HETEROJUNCTION P-MOSFETS, I.E.E.E. transactions on electron devices, 41(1), 1994, pp. 90-101

Authors: CRABBE EF COMFORT JH CRESSLER JD SUN JYC STORK JMC

Citation: Ef. Crabbe et al., HIGH-LOW POLYSILICON-EMITTER SIGE-BASE BIPOLAR-TRANSISTORS, IEEE electron device letters, 14(10), 1993, pp. 478-480