Authors:
BEAUDOIN M
GELBART Z
GIESSEN U
KELSON I
LEVY Y
MACKENZIE JA
PINNINGTON T
RITCHIE S
THORPE AJS
STREATER R
TIEDJE T
Citation: M. Beaudoin et al., IN-SITU THICKNESS MEASUREMENTS IN MOLECULAR-BEAM EPITAXY USING ALPHA-PARTICLE ENERGY-LOSS, Surface & coatings technology, 94-5(1-3), 1997, pp. 374-378
Authors:
RITCHIE S
JOHNSON SR
LAVOIE C
MACKENZIE JA
TIEDJE T
STREATER R
Citation: S. Ritchie et al., SEMICONDUCTOR SUBSTRATE CLEANING AND SURFACE-MORPHOLOGY IN MOLECULAR-BEAM EPITAXY, Surface science, 374(1-3), 1997, pp. 418-426
Authors:
BASSIGNANA IC
MACQUISTAN DA
HILLIER GC
STREATER R
BECKETT D
MAJEED A
MINER C
Citation: Ic. Bassignana et al., VARIATION IN THE LATTICE-PARAMETER AND CRYSTAL QUALITY OF COMMERCIALLY AVAILABLE SI-DOPED GAAS SUBSTRATES, Journal of crystal growth, 178(4), 1997, pp. 445-458