Authors: DUMIN DJ MADDUX JR SUBRAMONIAM R SCOTT RS VANCHINATHAN S DUMIN NA DICKERSON KJ MOPURI S GLADSTONE SM HUGHES TW

Citation: Dj. Dumin et al., CHARACTERIZING WEAROUT, BREAKDOWN, AND TRAP GENERATION IN THIN SILICON-OXIDE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(4), 1995, pp. 1780-1787

Authors: DUMIN DJ MOPURI SK VANCHINATHAN S SCOTT RS SUBRAMONIAM R LEWIS TG

Citation: Dj. Dumin et al., HIGH-FIELD RELATED THIN OXIDE WEAROUT AND BREAKDOWN, I.E.E.E. transactions on electron devices, 42(4), 1995, pp. 760-772

Authors: DUMIN DJ VANCHINATHAN S MOPURI S SUBRAMONIAM R

Citation: Dj. Dumin et al., EVIDENCE FOR NONUNIFORM TRAP DISTRIBUTIONS IN THIN OXIDES AFTER HIGH-VOLTAGE STRESSING, Journal of the Electrochemical Society, 142(6), 1995, pp. 2055-2059

Authors: DUMIN DJ MADDUX JR SCOTT RS SUBRAMONIAM R

Citation: Dj. Dumin et al., A MODEL RELATING WEAROUT TO BREAKDOWN IN THIN OXIDES, I.E.E.E. transactions on electron devices, 41(9), 1994, pp. 1570-1580