Authors: BENASSAYAG G VIEU C GIERAK J SUDRAUD P CORBIN A

Citation: G. Benassayag et al., NEW CHARACTERIZATION METHOD OF ION CURRENT-DENSITY PROFILE BASED ON DAMAGE DISTRIBUTION OF GA-ION BEAM IMPLANTATION IN GAAS( FOCUSED), Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(6), 1993, pp. 2420-2426