Authors:
CHOWDHURY EA
DASHIELL M
QIU G
OLOWOLAFE JO
JONCZYK R
SMITH D
BARNETT A
KOLODZEY J
UNRUH KM
SWANN CP
SUEHLE J
CHEN YA
Citation: Ea. Chowdhury et al., STRUCTURAL, OPTICAL AND ELECTRONIC-PROPERTIES OF OXIDIZED ALN THIN-FILMS AT DIFFERENT TEMPERATURES, Journal of electronic materials, 27(7), 1998, pp. 918-922
Authors:
KOLODZEY J
CHOWDHURY EA
QUI G
OLOWOLAFE J
SWANN CP
UNRUH KM
SUEHLE J
WILSON RG
ZAVADA JM
Citation: J. Kolodzey et al., THE EFFECTS OF OXIDATION TEMPERATURE ON THE CAPACITANCE-VOLTAGE CHARACTERISTICS OF OXIDIZED ALN FILMS ON SI, Applied physics letters, 71(26), 1997, pp. 3802-3804
Authors:
SCHLUND BJ
SUEHLE J
MESSICK C
CHAPARALA P
Citation: Bj. Schlund et al., A NEW PHYSICS-BASED MODEL FOR TIME-DEPENDENT DIELECTRIC-BREAKDOWN, Microelectronics and reliability, 36(11-12), 1996, pp. 1655-1658