Authors:
NARAYANAN V
SUKIDI N
HU CM
DIETZ N
BACHMANN KJ
MAHAJAN S
SHINGUBARA S
Citation: V. Narayanan et al., GROWTH OF GALLIUM-PHOSPHIDE LAYERS BY CHEMICAL BEAM EPITAXY ON OXIDE PATTERNED (001)SILICON SUBSTRATES, Materials science & engineering. B, Solid-state materials for advanced technology, 54(3), 1998, pp. 207-209
Authors:
BACHMANN KJ
SUKIDI N
HOPFNER C
HARRIS C
DIETZ N
TRAN HT
BEELER S
ITO K
BANKS HT
Citation: Kj. Bachmann et al., REAL-TIME MONITORING OF STEADY-STATE PULSED CHEMICAL BEAM EPITAXY BY P-POLARIZED REFLECTANCE, Journal of crystal growth, 183(3), 1998, pp. 323-337
Citation: N. Dietz et al., REAL-TIME MONITORING OF SURFACE PROCESSES BY P-POLARIZED REFLECTANCE, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(3), 1997, pp. 807-815
Authors:
BACHMANN KJ
ROSSOW U
SUKIDI N
CASTLEBERRY H
DIETZ N
Citation: Kj. Bachmann et al., HETEROEPITAXY OF GAP ON SI(100), Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(4), 1996, pp. 3019-3029
Citation: N. Sukidi et al., THE OXIDATION OF NI3SI-BASE ALLOYS, Materials science & engineering. A, Structural materials: properties, microstructure and processing, 191(1-2), 1995, pp. 223-231