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Authors: TAKAMATSU H SUMIE S MORIMOTO T KAWATA Y MURAKI T HARA T
Citation: H. Takamatsu et al., CHARACTERISTICS OF PHOTOACOUSTIC DISPLACEMENT FOR SILICON DAMAGED BY ION-IMPLANTATION, Journal of applied physics, 78(3), 1995, pp. 1504-1509

Authors: TAKAMATSU H SUMIE S MORIMOTO T KAWATA Y NISHIMOTO Y HORIUCHI T NAKAYAMA H KITA T NISHINO T
Citation: H. Takamatsu et al., THEORETICAL-ANALYSIS OF PHOTOACOUSTIC DISPLACEMENT FOR INHOMOGENEOUS MATERIALS, JPN J A P 1, 33(10), 1994, pp. 6032-6038

Authors: SUMIE S TAKAMATSU H MORIMOTO T NISHIMOTO Y KAWATA Y HORIUCHI T NAKAYAMA H KITA T NISHINO T
Citation: S. Sumie et al., ANALYSIS OF LATTICE-DEFECTS INDUCED BY ION-IMPLANTATION WITH PHOTOACOUSTIC DISPLACEMENT MEASUREMENTS, Journal of applied physics, 76(10), 1994, pp. 5681-5689

Authors: SUMIE S TAKAMATSU H NISHIMOTO Y KAWATA Y HORIUCHI T NAKAYAMA H KANATA T NISHINO T
Citation: S. Sumie et al., EFFECTS OF AMBIENT GAS ON PHOTOACOUSTIC DISPLACEMENT MEASUREMENT BY LASER INTERFEROMETRIC PROBE, Journal of applied physics, 74(11), 1993, pp. 6530-6533
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