Authors:
TAKAMATSU H
SUMIE S
MORIMOTO T
KAWATA Y
MURAKI T
HARA T
Citation: H. Takamatsu et al., CHARACTERISTICS OF PHOTOACOUSTIC DISPLACEMENT FOR SILICON DAMAGED BY ION-IMPLANTATION, Journal of applied physics, 78(3), 1995, pp. 1504-1509
Authors:
TAKAMATSU H
SUMIE S
MORIMOTO T
KAWATA Y
NISHIMOTO Y
HORIUCHI T
NAKAYAMA H
KITA T
NISHINO T
Citation: H. Takamatsu et al., THEORETICAL-ANALYSIS OF PHOTOACOUSTIC DISPLACEMENT FOR INHOMOGENEOUS MATERIALS, JPN J A P 1, 33(10), 1994, pp. 6032-6038
Authors:
SUMIE S
TAKAMATSU H
MORIMOTO T
NISHIMOTO Y
KAWATA Y
HORIUCHI T
NAKAYAMA H
KITA T
NISHINO T
Citation: S. Sumie et al., ANALYSIS OF LATTICE-DEFECTS INDUCED BY ION-IMPLANTATION WITH PHOTOACOUSTIC DISPLACEMENT MEASUREMENTS, Journal of applied physics, 76(10), 1994, pp. 5681-5689
Authors:
SUMIE S
TAKAMATSU H
NISHIMOTO Y
KAWATA Y
HORIUCHI T
NAKAYAMA H
KANATA T
NISHINO T
Citation: S. Sumie et al., EFFECTS OF AMBIENT GAS ON PHOTOACOUSTIC DISPLACEMENT MEASUREMENT BY LASER INTERFEROMETRIC PROBE, Journal of applied physics, 74(11), 1993, pp. 6530-6533