Authors:
MOORE WT
SPRINGTHORPE AJ
LESTER TP
EICHER S
SURRIDGE RK
HU J
MINER CJ
Citation: Wt. Moore et al., THE EFFECT OF EMITTER LAYER VARIATIONS ON THE CURRENT GAIN OF ALGAAS-GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN BY CHEMICAL BEAM EPITAXY, Journal of crystal growth, 136(1-4), 1994, pp. 230-234
Authors:
HU J
ZHANG QM
SURRIDGE RK
XU JM
PAVLIDIS D
Citation: J. Hu et al., A NEW EMITTER DESIGN OF INGAP GAAS HBTS FOR HIGH-FREQUENCY APPLICATIONS/, IEEE electron device letters, 14(12), 1993, pp. 563-565