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Results: 1-9 |
Results: 9
DEEP-LEVEL TRANSIENT SPECTROSCOPY STUDY OF THE DAMAGE-INDUCED IN N-TYPE SILICON BY A GATE OXIDE ETCHING IN A CHF3 AR PLASMA/
Authors: ADEGBOYEGA G PEREZQUINTANA I POGGI A SUSI E MERLI M
Citation: G. Adegboyega et al., DEEP-LEVEL TRANSIENT SPECTROSCOPY STUDY OF THE DAMAGE-INDUCED IN N-TYPE SILICON BY A GATE OXIDE ETCHING IN A CHF3 AR PLASMA/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(3), 1997, pp. 623-628
INTRINSIC GETTERING OF MANGANESE IMPURITY IN SILICON SUBSTRATE
Authors: ADEGBOYEGA GA OSASONA O SUSI E
Citation: Ga. Adegboyega et al., INTRINSIC GETTERING OF MANGANESE IMPURITY IN SILICON SUBSTRATE, Physica status solidi. a, Applied research, 161(1), 1997, pp. 231-235
SURFACE DAMAGE IN PROCESSED SILICON
Authors: CASTALDINI A CAVALLINI A POGGI A SUSI E
Citation: A. Castaldini et al., SURFACE DAMAGE IN PROCESSED SILICON, Materials science & engineering. B, Solid-state materials for advanced technology, 42(1-3), 1996, pp. 249-253
THE EFFECTS OF OXYGEN PRECIPITATES ON THE ELECTRICAL-PROPERTIES OF SILVER IMPURITIES IN P-TYPE SILICON (VOL 156, PG 169, 1996)
Authors: ADEGBOYEGA GA PASSARI L BUTTURRI MA SUSI E
Citation: Ga. Adegboyega et al., THE EFFECTS OF OXYGEN PRECIPITATES ON THE ELECTRICAL-PROPERTIES OF SILVER IMPURITIES IN P-TYPE SILICON (VOL 156, PG 169, 1996), Physica status solidi. a, Applied research, 157(2), 1996, pp. 531-531
THE EFFECTS OF OXYGEN PRECIPITATES ON THE ELECTRICAL-PROPERTIES OF SILVER IMPURITIES IN P-TYPE SILICON
Authors: ADEGBOYEGA GA PASSARI L BUTTURRI MA SUSI E
Citation: Ga. Adegboyega et al., THE EFFECTS OF OXYGEN PRECIPITATES ON THE ELECTRICAL-PROPERTIES OF SILVER IMPURITIES IN P-TYPE SILICON, Physica status solidi. a, Applied research, 156(1), 1996, pp. 169-174
STUDY OF THE ELECTRICAL ACTIVE DEFECTS INDUCED BY REACTIVE ION ETCHING IN N-TYPE SILICON
Authors: BIAVATI M PEREZQUINTANA I POGGI A SUSI E
Citation: M. Biavati et al., STUDY OF THE ELECTRICAL ACTIVE DEFECTS INDUCED BY REACTIVE ION ETCHING IN N-TYPE SILICON, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(5), 1995, pp. 2139-2141
ELECTRICAL-PROPERTIES OF RAPID THERMAL ANNEALING-INDUCED DEFECTS IN SILICON
Authors: SUSI E POGGI A MADRIGALI M
Citation: E. Susi et al., ELECTRICAL-PROPERTIES OF RAPID THERMAL ANNEALING-INDUCED DEFECTS IN SILICON, Journal of the Electrochemical Society, 142(6), 1995, pp. 2081-2085
RAPID THERMAL ANNEALING OF P-TYPE SILICON - CORRELATION BETWEEN DEEP-LEVEL TRANSIENT SPECTROSCOPY AND LIFETIME MEASUREMENTS
Authors: POGGI A SUSI E BUTTURI MA CAROTTA MC
Citation: A. Poggi et al., RAPID THERMAL ANNEALING OF P-TYPE SILICON - CORRELATION BETWEEN DEEP-LEVEL TRANSIENT SPECTROSCOPY AND LIFETIME MEASUREMENTS, Journal of the Electrochemical Society, 141(3), 1994, pp. 754-758
ADULT-ONSET CYCLIC NEUTROPENIA RESPONSIVE TO CYCLOSPORINE THERAPY IN A PATIENT WITH ANKYLOSING-SPONDYLITIS
Authors: STOREK J GLASPY JA GRODY WW SUSI E SLATER ED
Citation: J. Storek et al., ADULT-ONSET CYCLIC NEUTROPENIA RESPONSIVE TO CYCLOSPORINE THERAPY IN A PATIENT WITH ANKYLOSING-SPONDYLITIS, American journal of hematology, 43(2), 1993, pp. 139-143
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