Authors:
ANIEL F
SYLVESTRE A
JIN Y
CROZAT P
DELUSTRAC A
ADDE R
Citation: F. Aniel et al., ENHANCEMENTS AND DEGRADATIONS IN ULTRASHORT GATE GAAS AND INP HEMTS PROPERTIES AT CRYOGENIC TEMPERATURES - AN OVERVIEW, Journal de physique. IV, 6(C3), 1996, pp. 145-149
Authors:
SYLVESTRE A
ANIEL F
BOUCAUD P
JULIEN FH
CROZAT P
DELUSTRAC A
ADDE R
JIN Y
PRASEUTH JP
Citation: A. Sylvestre et al., LOW-TEMPERATURE ELECTROLUMINESCENCE SPECTROSCOPY OF HIGH-ELECTRON-MOBILITY TRANSISTORS ON INP, Journal of applied physics, 80(1), 1996, pp. 464-469
Citation: A. Sylvestre et Jp. Blondin, NONVERBAL BEHAVIORS ACCOMPANYING AN ANXIE TY INDUCED BY RECALL OF AN EMOTIONAL EXPERIENCE, International journal of psychology, 31(3-4), 1996, pp. 28496-28496
Authors:
ANIEL F
BOUCAUD P
SYLVESTRE A
CROZAT P
JULIEN FH
ADDE R
JIN Y
Citation: F. Aniel et al., ELECTROLUMINESCENCE SPECTROSCOPY OF ALGAAS INGAAS AND ALGAAS/GAAS HIGH-ELECTRON-MOBILITY TRANSISTORS/, Journal of applied physics, 77(5), 1995, pp. 2184-2189
Authors:
SYLVESTRE A
CROZAT P
ADDE R
DELUSTRAC A
JIN Y
HARMAND JC
QUILLEC M
Citation: A. Sylvestre et al., CRYOGENIC INVESTIGATION OF GATE LEAKAGE AND RF PERFORMANCES DOWN TO 50K OF 0.2-MU-M ALLNAS GAINAS/INP HEMTS/, Electronics Letters, 29(24), 1993, pp. 2152-2154