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Citation: K. Hata et al., Atomically resolved local variation of the barrier height of the flip-flopmotion of single buckled dimers of Si(100), PHYS REV L, 86(14), 2001, pp. 3084-3087

Authors: Hata, K Ozawa, S Sainoo, Y Miyake, K Shigekawa, H

Citation: K. Hata et al., Electronic structure of the C defects of Si(001) measured by scanning tunneling spectroscope at room and low temperature (80 K), SURF SCI, 447(1-3), 2000, pp. 156-164

Authors: Sainoo, Y Kimura, T Morita, R Yamashita, M Hata, K Shigekawa, H

Citation: Y. Sainoo et al., Electronic structure of the Si(100) surface A defects analyzed by scanningtunneling spectroscopy at 80 K, JPN J A P 1, 38(6B), 1999, pp. 3833-3836

Authors: Hata, K Kimura, T Sainoo, Y Miyake, K Morita, R Yamashita, M Shigekawa, H

Citation: K. Hata et al., Spontaneous fluctuation between symmetric and buckled dimer domains of Si(100) at 80 K, JPN J A P 1, 38(5A), 1999, pp. 2904-2909