Authors:
Sampath, AV
Misra, M
Seth, K
Fedyunin, Y
Ng, HM
Iliopoulos, E
Feit, Z
Moustakas, TD
Citation: Av. Sampath et al., A comparative study of GaN diodes grown by MBE on sapphire and HVPE-GaN/sapphire substrates., MRS I J N S, 5, 2000, pp. NIL_497-NIL_502
Citation: M. Misra et al., Vertical transport properties of GaN Schottky diodes grown by molecular beam epitaxy, MRS I J N S, 5, 2000, pp. NIL_503-NIL_508
Citation: M. Misra et al., Investigation of vertical transport in n-GaN films grown by molecular beamepitaxy using Schottky barrier diodes, APPL PHYS L, 76(8), 2000, pp. 1045-1047