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Results: 1-5 |
Results: 5

Authors: Moustakas, TD Iliopoulos, E Sampath, AV Ng, HM Doppalapudi, D Misra, M Korakakis, D Singh, R
Citation: Td. Moustakas et al., Growth and device applications of III-nitrides by MBE, J CRYST GR, 227, 2001, pp. 13-20

Authors: Sampath, AV Misra, M Seth, K Fedyunin, Y Ng, HM Iliopoulos, E Feit, Z Moustakas, TD
Citation: Av. Sampath et al., A comparative study of GaN diodes grown by MBE on sapphire and HVPE-GaN/sapphire substrates., MRS I J N S, 5, 2000, pp. NIL_497-NIL_502

Authors: Misra, M Sampath, AV Moustakas, TD
Citation: M. Misra et al., Vertical transport properties of GaN Schottky diodes grown by molecular beam epitaxy, MRS I J N S, 5, 2000, pp. NIL_503-NIL_508

Authors: Ryan, P Chao, YC Downes, J McGuinness, C Smith, KE Sampath, AV Moustakas, TD
Citation: P. Ryan et al., Surface electronic structure of p-type GaN(0001), SURF SCI, 467(1-3), 2000, pp. L827-L833

Authors: Misra, M Sampath, AV Moustakas, TD
Citation: M. Misra et al., Investigation of vertical transport in n-GaN films grown by molecular beamepitaxy using Schottky barrier diodes, APPL PHYS L, 76(8), 2000, pp. 1045-1047
Risultati: 1-5 |