AAAAAA

   
Results: 1-18 |
Results: 18
Molecular beam epitaxy growth and doping of III-nitrides on Si(111): layermorphology and doping
Authors: Calleja, E Sanchez-Garcia, MA Calle, F Naranjo, FB Munoz, E Jahn, U Ploog, K Sanchez, J Calleja, JM Saarinen, K Hautojarvi, P
Citation: E. Calleja et al., Molecular beam epitaxy growth and doping of III-nitrides on Si(111): layermorphology and doping, MAT SCI E B, 82(1-3), 2001, pp. 2-8
MBE-grown high-quality (Al, Ga)N/GaN distributed Bragg reflectors for resonant cavity LEDs
Authors: Fernandez, S Naranjo, FB Calle, F Sanchez-Garcia, MA Calleja, E Vennegues, P Trampert, A Ploog, KH
Citation: S. Fernandez et al., MBE-grown high-quality (Al, Ga)N/GaN distributed Bragg reflectors for resonant cavity LEDs, SEMIC SCI T, 16(11), 2001, pp. 913-917
AlGaN photodetectors grown on Si(111) by molecular beam epitaxy
Authors: Pau, JL Monroy, E Munoz, E Naranjo, FB Calle, F Sanchez-Garcia, MA Calleja, E
Citation: Jl. Pau et al., AlGaN photodetectors grown on Si(111) by molecular beam epitaxy, J CRYST GR, 230(3-4), 2001, pp. 544-548
Fast AlGaN metal-semiconductor-metal photodetectors grown on Si(111)
Authors: Pau, JL Monroy, E Munoz, E Calle, F Sanchez-Garcia, MA Calleja, E
Citation: Jl. Pau et al., Fast AlGaN metal-semiconductor-metal photodetectors grown on Si(111), ELECTR LETT, 37(4), 2001, pp. 239-240
High-quality distributed Bragg reflectors based on AlxGa1-xN/GaN multilayers grown by molecular-beam epitaxy
Authors: Fernandez, S Naranjo, FB Calle, F Sanchez-Garcia, MA Calleja, E Vennegues, P Trampert, A Ploog, KH
Citation: S. Fernandez et al., High-quality distributed Bragg reflectors based on AlxGa1-xN/GaN multilayers grown by molecular-beam epitaxy, APPL PHYS L, 79(14), 2001, pp. 2136-2138
Optical investigation of strain in Si-doped GaN films
Authors: Sanchez-Paramo, J Calleja, JM Sanchez-Garcia, MA Calleja, E
Citation: J. Sanchez-paramo et al., Optical investigation of strain in Si-doped GaN films, APPL PHYS L, 78(26), 2001, pp. 4124-4126
Inversion domains in GaN layers grown on (111) silicon by molecular-beam epitaxy
Authors: Sanchez, AM Pacheco, FJ Molina, SI Garcia, R Ruterana, P Sanchez-Garcia, MA Calleja, E
Citation: Am. Sanchez et al., Inversion domains in GaN layers grown on (111) silicon by molecular-beam epitaxy, APPL PHYS L, 78(18), 2001, pp. 2688-2690
Si doping effect on the defect structure in GaN/AlN/Si(111) heteroepitaxial systems
Authors: Sanchez, AM Molina, SI Pacheco, FJ Garcia, R Sanchez-Garcia, MA Sanchez, FJ Calleja, E
Citation: Am. Sanchez et al., Si doping effect on the defect structure in GaN/AlN/Si(111) heteroepitaxial systems, B S ESP CER, 39(4), 2000, pp. 468-471
Wet etching of GaN grown by molecular beam epitaxy on Si(111)
Authors: Palacios, T Calle, F Varela, M Ballesteros, C Monroy, E Naranjo, FB Sanchez-Garcia, MA Calleja, E Munoz, E
Citation: T. Palacios et al., Wet etching of GaN grown by molecular beam epitaxy on Si(111), SEMIC SCI T, 15(10), 2000, pp. 996-1000
Luminescence properties and defects in GaN nanocolumns grown by molecular beam epitaxy
Authors: Calleja, E Sanchez-Garcia, MA Sanchez, FJ Calle, F Naranjo, FB Munoz, E Jahn, U Ploog, K
Citation: E. Calleja et al., Luminescence properties and defects in GaN nanocolumns grown by molecular beam epitaxy, PHYS REV B, 62(24), 2000, pp. 16826-16834
Study of the effects of Mg and Be co-doping in GaN layers
Authors: Naranjo, FB Sanchez-Garcia, MA Pau, JL Jimenez, A Calleja, E Munoz, E Oila, J Saarinen, K Hautojarvi, P
Citation: Fb. Naranjo et al., Study of the effects of Mg and Be co-doping in GaN layers, PHYS ST S-A, 180(1), 2000, pp. 97-102
Ultraviolet electroluminescence in GaN/AlGaN single-heterojunction light-emitting diodes grown on Si(111)
Authors: Sanchez-Garcia, MA Naranjo, FB Pau, JL Jimenez, A Calleja, E Munoz, E
Citation: Ma. Sanchez-garcia et al., Ultraviolet electroluminescence in GaN/AlGaN single-heterojunction light-emitting diodes grown on Si(111), J APPL PHYS, 87(3), 2000, pp. 1569-1571
High visible rejection AlGaN photodetectors on Si(111) substrates
Authors: Pau, JL Monroy, E Naranjo, FB Munoz, E Calle, F Sanchez-Garcia, MA Calleja, E
Citation: Jl. Pau et al., High visible rejection AlGaN photodetectors on Si(111) substrates, APPL PHYS L, 76(19), 2000, pp. 2785-2787
Influence of Si doping on the subgrain structure of GaN grown on AlN/Si(111)
Authors: Molina, SI Sanchez, AM Pacheco, FJ Garcia, R Sanchez-Garcia, MA Calleja, E
Citation: Si. Molina et al., Influence of Si doping on the subgrain structure of GaN grown on AlN/Si(111), PHYS ST S-A, 176(1), 1999, pp. 401-406
Properties of homoepitaxial and heteroepitaxial GaN layers grown by plasma-assisted MBE
Authors: Sanchez-Garcia, MA Naranjo, FB Pau, JL Jimenez, A Calleja, E Munoz, E Molina, SI Sanchez, AM Pacheco, FJ Garcia, R
Citation: Ma. Sanchez-garcia et al., Properties of homoepitaxial and heteroepitaxial GaN layers grown by plasma-assisted MBE, PHYS ST S-A, 176(1), 1999, pp. 447-452
Growth of III-nitrides on Si(111) by molecular beam epitaxy Doping, optical, and electrical properties
Authors: Calleja, E Sanchez-Garcia, MA Sanchez, FJ Calle, F Naranjo, FB Munoz, E Molina, SI Sanchez, AM Pacheco, FJ Garcia, R
Citation: E. Calleja et al., Growth of III-nitrides on Si(111) by molecular beam epitaxy Doping, optical, and electrical properties, J CRYST GR, 202, 1999, pp. 296-317
MBE growth of GaN and AlGaN layers on Si(111) substrates: doping effects
Authors: Sanchez-Garcia, MA Calleja, E Naranjo, FB Sanchez, FJ Calle, F Munoz, E Sanchez, AM Pacheco, FJ Molina, SI
Citation: Ma. Sanchez-garcia et al., MBE growth of GaN and AlGaN layers on Si(111) substrates: doping effects, J CRYST GR, 202, 1999, pp. 415-418
The effect of Si doping on the defect structure of GaN/AlN/Si(111)
Authors: Molina, SI Sanchez, AM Pacheco, FJ Garcia, R Sanchez-Garcia, MA Sanchez, FJ Calleja, E
Citation: Si. Molina et al., The effect of Si doping on the defect structure of GaN/AlN/Si(111), APPL PHYS L, 74(22), 1999, pp. 3362-3364
Risultati: 1-18 |