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Results: 1-6 |
Results: 6

Authors: Bellone, S Daliento, S Sanseverino, A
Citation: S. Bellone et al., Modelling and characterisation of the input I-V curves of bipolar JFET structures showing a negative resistance behaviour, SOL ST ELEC, 45(3), 2001, pp. 483-488

Authors: Daliento, S Sanseverino, A Spirito, P Zeni, L
Citation: S. Daliento et al., Parametric description of the effect of electron irradiation on recombination lifetime in silicon layers: An experimental approach, IEEE POW E, 14(1), 1999, pp. 117-123

Authors: Daliento, S Sanseverino, A Spirito, P
Citation: S. Daliento et al., An improved test structure for recombination lifetime profile measurementsin very thick silicon wafers, IEEE ELEC D, 20(1), 1999, pp. 45-47

Authors: Bellone, S Daliento, S Sanseverino, A
Citation: S. Bellone et al., A measurement method of the ideal I-V characteristics of diodes up to the built-in voltage limit, SOL ST ELEC, 43(7), 1999, pp. 1201-1207

Authors: Daliento, S Sanseverino, A Spirito, P
Citation: S. Daliento et al., An improved model for extraction of strongly spatial dependent lifetimes with the AC lifetime profiling technique, IEEE DEVICE, 46(8), 1999, pp. 1808-1810

Authors: Spirito, P Daliento, S Sanseverino, A Zeni, L
Citation: P. Spirito et al., Untitled, J ELCHEM SO, 146(3), 1999, pp. 1237-1237
Risultati: 1-6 |