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Results:
1-3
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Results: 3
Properties of high kappa gate dielectrics Gd2O3 and Y2O3 for Si
Authors:
Kwo, J Hong, M Kortan, AR Queeney, KL Chabal, YJ Opila, RL Muller, DA Chu, SNG Sapjeta, BJ Lay, TS Mannaerts, JP Boone, T Krautter, HW Krajewski, JJ Sergnt, AM Rosamilia, JM
Citation:
J. Kwo et al., Properties of high kappa gate dielectrics Gd2O3 and Y2O3 for Si, J APPL PHYS, 89(7), 2001, pp. 3920-3927
Interface reactions of high-kappa Y2O3 gate oxides with Si
Authors:
Busch, BW Kwo, J Hong, M Mannaerts, JP Sapjeta, BJ Schulte, WH Garfunkel, E Gustafsson, T
Citation:
Bw. Busch et al., Interface reactions of high-kappa Y2O3 gate oxides with Si, APPL PHYS L, 79(15), 2001, pp. 2447-2449
Polarized electroluminescence from aligned chromophores bg the friction transfer method
Authors:
Chen, XL Bao, ZN Sapjeta, BJ Lovinger, AJ Crone, B
Citation:
Xl. Chen et al., Polarized electroluminescence from aligned chromophores bg the friction transfer method, ADVAN MATER, 12(5), 2000, pp. 344
Risultati:
1-3
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