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Results: 1-10 |
Results: 10
Properties of GaN epitaxial layers grown on 6H-SiC(0001) by plasma-assisted molecular beam epitaxy
Authors: Lee, CD Ramachandran, V Sagar, A Feenstra, RM Greve, DW Sarney, WL Salamanca-Riba, L Look, DC Bai, S Choyke, WJ Devaty, RP
Citation: Cd. Lee et al., Properties of GaN epitaxial layers grown on 6H-SiC(0001) by plasma-assisted molecular beam epitaxy, J ELEC MAT, 30(3), 2001, pp. 162-169
Growth of GaN nanowires by direct reaction of Ga with NH3
Authors: He, MQ Zhou, PZ Mohammad, SN Harris, GL Halpern, JB Jacobs, R Sarney, WL Salamanca-Riba, L
Citation: Mq. He et al., Growth of GaN nanowires by direct reaction of Ga with NH3, J CRYST GR, 231(3), 2001, pp. 357-365
Role of Ga flux in dislocation reduction in GaN films grown on SiC(0001)
Authors: Lee, CD Sagar, A Feenstra, RM Inoki, CK Kuan, TS Sarney, WL Salamanca-Riba, L
Citation: Cd. Lee et al., Role of Ga flux in dislocation reduction in GaN films grown on SiC(0001), APPL PHYS L, 79(21), 2001, pp. 3428-3430
TEM study of the morphology of GaN/SiC (0001) grown at various temperatures by MBE
Authors: Sarney, WL Salamanca-Riba, L Ramachandran, V Feenstra, RM Greve, DW
Citation: Wl. Sarney et al., TEM study of the morphology of GaN/SiC (0001) grown at various temperatures by MBE, MRS I J N S, 5, 2000, pp. NIL_204-NIL_209
TEM study of bulk AlN growth by physical vapor transport
Authors: Sarney, WL Salamanca-Riba, L Hossain, T Zhou, P Jayatirtha, HN Kang, HH Vispute, RD Spencer, M Jones, KA
Citation: Wl. Sarney et al., TEM study of bulk AlN growth by physical vapor transport, MRS I J N S, 5, 2000, pp. NIL_329-NIL_334
Optimized structural properties of wurtzite GaN on SiC(0001) grown by molecular beam epitaxy
Authors: Ramachandran, V Feenstra, RM Sarney, WL Salamanca-Riba, L Greve, DW
Citation: V. Ramachandran et al., Optimized structural properties of wurtzite GaN on SiC(0001) grown by molecular beam epitaxy, J VAC SCI A, 18(4), 2000, pp. 1915-1918
SiC/Si(111) film quality as a function of GeH4 flow in an MOCVD reactor
Authors: Sarney, WL Salamanca-Riba, L Vispute, RD Zhou, P Taylor, C Spencer, MG Jones, KA
Citation: Wl. Sarney et al., SiC/Si(111) film quality as a function of GeH4 flow in an MOCVD reactor, J ELEC MAT, 29(3), 2000, pp. 359-363
Growth of large-scale GaN nanowires and tubes by direct reaction of Ga with NH3
Authors: He, MQ Minus, I Zhou, PZ Mohammed, SN Halpern, JB Jacobs, R Sarney, WL Salamanca-Riba, L Vispute, RD
Citation: Mq. He et al., Growth of large-scale GaN nanowires and tubes by direct reaction of Ga with NH3, APPL PHYS L, 77(23), 2000, pp. 3731-3733
Pulsed laser deposition and processing of wide band gap semiconductors andrelated materials
Authors: Vispute, RD Choopun, S Enck, R Patel, A Talyansky, V Sharma, RP Venkatesan, T Sarney, WL Salamanca-Riba, L Andronescu, SN Iliadis, AA Jones, KA
Citation: Rd. Vispute et al., Pulsed laser deposition and processing of wide band gap semiconductors andrelated materials, J ELEC MAT, 28(3), 1999, pp. 275-286
Inversion of wurtzite GaN(0001) by exposure to magnesium
Authors: Ramachandran, V Feenstra, RM Sarney, WL Salamanca-Riba, L Northrup, JE Romano, LT Greve, DW
Citation: V. Ramachandran et al., Inversion of wurtzite GaN(0001) by exposure to magnesium, APPL PHYS L, 75(6), 1999, pp. 808-810
Risultati: 1-10 |