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Results:
1-8
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Results: 8
Authors:
Nakao, K
Ishihara, S
Tanaka, Y
Suzuki, D
Satou, I
Uemura, T
Tsuda, K
Kizu, N
Kobayashi, J
Citation: K. Nakao et al., Response time improvement of OCB mode TFT-LCDs by using capacitively coupled driving method, IEICE TR EL, E84C(11), 2001, pp. 1624-1629
Authors:
Satou, I
Watanabe, M
Watanabe, H
Itani, T
Citation: I. Satou et al., Development of advanced silylation process for 157-nm lithography, MICROEL ENG, 57-8, 2001, pp. 571-577
Authors:
Satou, I
Watanabe, H
Endo, M
Morimoto, H
Citation: I. Satou et al., Extension of the ArF excimer lithography to sub-0.10 mu m design rule devices using bi-layer silylation process, JPN J A P 1, 39(2A), 2000, pp. 442-447
Authors:
Satou, I
Watanabe, M
Watanabe, H
Itani, T
Citation: I. Satou et al., Progress in top surface imaging process, JPN J A P 1, 39(12B), 2000, pp. 6966-6971
Authors:
Toriumi, M
Satou, I
Itani, T
Citation: M. Toriumi et al., Vacuum ultraviolet spectra of fluorocompounds for 157 nm lithography, J VAC SCI B, 18(6), 2000, pp. 3328-3331
Authors:
Endo, M
Satou, I
Watanabe, H
Morimoto, H
Citation: M. Endo et al., High sensitive negative silylation process for 193nm lithography, MICROEL ENG, 53(1-4), 2000, pp. 485-488
Authors:
Satou, I
Kuhara, K
Endo, M
Morimoto, H
Citation: I. Satou et al., Sub-0.10 mu m hole fabrication using bilayer silylation process for 193 nmlithography, JPN J A P 1, 38(12B), 1999, pp. 7008-7012
Authors:
Satou, I
Kuhara, K
Endo, M
Morimoto, H
Citation: I. Satou et al., Study of bilayer silylation process for 193 nm lithography using chemically amplified resist, J VAC SCI B, 17(6), 1999, pp. 3326-3329
Risultati:
1-8
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