Authors: Buttari, D Chini, A Meneghesso, G Zanoni, E Sawdai, D Pavlidis, D Hsu, SSH

Citation: D. Buttari et al., Measurements of the InGaAs hole impact ionization coefficient in InAlAs/InGaAs pnp HBTs, IEEE ELEC D, 22(5), 2001, pp. 197-199

Authors: Sawdai, D Pavlidis, D

Citation: D. Sawdai et D. Pavlidis, InP-based complementary HBT amplifiers for use in communication systems, SOL ST ELEC, 43(8), 1999, pp. 1507-1512

Authors: Sawdai, D Pavlidis, D

Citation: D. Sawdai et D. Pavlidis, Push-pull circuits using n-p-n and p-n-p InP-based HBT's for power amplification, IEEE MICR T, 47(8), 1999, pp. 1439-1448

Authors: Sawdai, D Yang, KH Hsu, SSH Pavlidis, D Haddad, GI

Citation: D. Sawdai et al., Power performance of InP-based single and double heterojunction bipolar transistors, IEEE MICR T, 47(8), 1999, pp. 1449-1456

Authors: Sawdai, D Pavlidis, D Cui, DL

Citation: D. Sawdai et al., Enhanced transmission line model structures for accurate resistance evaluation of small-size contacts and for more reliable fabrication, IEEE DEVICE, 46(7), 1999, pp. 1302-1311