Authors: McFall, JL Hengehold, RL Yeo, YK Van Nostrand, JE Saxler, AW

Citation: Jl. Mcfall et al., Optical investigation of MBE grown Si-doped AlxGa1-xN as a function of nominal Al mole fraction up to 0.5, J CRYST GR, 227, 2001, pp. 458-465

Authors: Reynolds, DC Look, DC Jogai, B Saxler, AW Park, SS Hahn, JY

Citation: Dc. Reynolds et al., Identification of the Gamma(5) and Gamma(6) free excitons in GaN, APPL PHYS L, 77(18), 2000, pp. 2879-2881

Authors: Ohmer, MC Goldstein, JT Zelmon, DE Saxler, AW Hegde, SM Wolf, JD Schunemann, PG Pollak, TM

Citation: Mc. Ohmer et al., Infrared properties of AgGaTe2, a nonlinear optical chalcopyrite semiconductor, J APPL PHYS, 86(1), 1999, pp. 94-99

Authors: Kozodoy, P Smorchkova, YP Hansen, M Xing, HL DenBaars, SP Mishra, UK Saxler, AW Perrin, R Mitchel, WC

Citation: P. Kozodoy et al., Polarization-enhanced Mg doping of AlGaN/GaN superlattices, APPL PHYS L, 75(16), 1999, pp. 2444-2446

Authors: Lo, I Hsieh, KY Hwang, SL Tu, LW Mitchel, WC Saxler, AW

Citation: I. Lo et al., Effect of threading dislocations on electron transport in In0.24Ga0.76N/GaN multiple quantum wells, APPL PHYS L, 74(15), 1999, pp. 2167-2169