Citation: G. Santoro et al., Surface charge density waves and the Mott insulators for root 3 x root 3 adlayers on (111) semiconductor surfaces, COMP MAT SC, 20(3-4), 2001, pp. 343-350
Authors:
Gebauer, R
Serra, S
Chiarotti, GL
Scandolo, S
Baroni, S
Tosatti, E
Citation: R. Gebauer et al., Noncolinear spin polarization from frustrated antiferromagnetism: A possible scenario for molecular oxygen at high pressure, PHYS REV B, 61(9), 2000, pp. 6145-6149
Citation: S. Scandolo et J. Kohanoff, Optimal basis set for electronic structure calculations in periodic systems, PHYS REV B, 62(23), 2000, pp. 15499-15504
Citation: G. Ballabio et al., root 3X root 3R30 degrees versus adatom-rest-atom phases on (111) semiconductor surfaces, PHYS REV B, 61(20), 2000, pp. R13345-R13348
Citation: G. Santoro et al., Charge-density waves and surface Mott insulators for adlayer structures onsemiconductors: Extended Hubbard modeling, PHYS REV B, 59(3), 1999, pp. 1891-1901
Authors:
Kohanoff, J
Scandolo, S
de Gironcoli, S
Tosatti, E
Citation: J. Kohanoff et al., Dipole-quadrupole interactions and the nature of phase III of compressed hydrogen, PHYS REV L, 83(20), 1999, pp. 4097-4100
Authors:
Zhao, JJ
Scandolo, S
Kohanoff, J
Chiarotti, GL
Tosatti, E
Citation: Jj. Zhao et al., Elasticity and mechanical instabilities of diamond at megabar stresses: Implications for diamond-anvil-cell research, APPL PHYS L, 75(4), 1999, pp. 487-488