Authors: Schaake, HF

Citation: Hf. Schaake, On the kinetics of the activation of arsenic as a p-type dopant in Hg1-xCdxTe, J ELEC MAT, 30(6), 2001, pp. 789-793

Authors: Aqariden, F Shih, HD Kinch, MA Schaake, HF

Citation: F. Aqariden et al., Electrical properties of low-arsenic-doped HgCdTe grown by molecular beam epitaxy, APPL PHYS L, 78(22), 2001, pp. 3481-3483

Authors: Chandra, D Schaake, HF Tregilgas, JH Aqariden, F Kinch, MA Syllaois, AJ

Citation: D. Chandra et al., Vacancies in Hg1-xCdxTe, J ELEC MAT, 29(6), 2000, pp. 729-731

Authors: Schaake, HF

Citation: Hf. Schaake, Kinetics of activation of group V impurities in Hg1-xCdxTe alloys, J APPL PHYS, 88(4), 2000, pp. 1765-1770