Authors: Goldhahn, R Shokhovets, S Scheiner, J Gobsch, G Cheng, TS Foxon, CT Kaiser, U Kipshidze, GD Richter, W

Citation: R. Goldhahn et al., Determination of group III nitride film properties by reflectance and spectroscopic ellipsometry studies, PHYS ST S-A, 177(1), 2000, pp. 107-115

Authors: Goldhahn, R Scheiner, J Shokhovets, S Frey, T Kohler, U As, DJ Lischka, K

Citation: R. Goldhahn et al., Refractive index and gap energy of cubic InxGa1-xN, APPL PHYS L, 76(3), 2000, pp. 291-293

Authors: Scheiner, J Goldhahn, R Cimalla, V Ecke, G Attenberger, W Lindner, JKM Gobsch, G Pezoldt, J

Citation: J. Scheiner et al., Spectroscopic ellipsometry studies of heteroepitaxially grown cubic silicon carbide layers on silicon, MAT SCI E B, 61-2, 1999, pp. 526-530

Authors: Goldhahn, R Scheiner, J Shokhovets, S Frey, T Kohler, U As, DJ Lischka, K

Citation: R. Goldhahn et al., Determination of optical constants for cubic InxGa1-xN layers, PHYS ST S-B, 216(1), 1999, pp. 265-268

Authors: Kohler, U As, DJ Schottker, B Frey, T Lischka, K Scheiner, J Shokhovets, S Goldhahn, R

Citation: U. Kohler et al., Optical constants of cubic GaN in the energy range of 1.5-3.7 eV, J APPL PHYS, 85(1), 1999, pp. 404-407

Authors: Scheiner, J

Citation: J. Scheiner, Activity space research on the basis of a phenomenological and action-based perspective, GEOGR Z, 86(1), 1998, pp. 50-66