Authors: Preobrajenski, AB Schomann, S Gebhardt, RK Chasse, T

Citation: Ab. Preobrajenski et al., Passivation of the Ge/InP(110) interface by As interlayers: Interface reactions and band offsets, J VAC SCI B, 18(4), 2000, pp. 1973-1979

Authors: Chasse, T Chasse, A Schomann, S

Citation: T. Chasse et al., High-temperature arsenic adsorption on InP(110) - surface bonding and surface structure, J ELEC SPEC, 96(1-3), 1998, pp. 1-9