Authors: Chumbes, EM Schremer, AT Smart, JA Yang, Y MacDonald, NC Hogue, D Komiak, JJ Lichwalla, SJ Leoni, RE Shealy, JR

Citation: Em. Chumbes et al., AlGaN/GaN high electron mobility transistors on Si(111) substrates, IEEE DEVICE, 48(3), 2001, pp. 420-426

Authors: Kaiser, S Jakob, M Zweck, J Gebhardt, W Ambacher, O Dimitrov, R Schremer, AT Smart, JA Shealy, JR

Citation: S. Kaiser et al., Structural properties of AlGaN/GaN heterostructures on Si(111) substrates suitable for high-electron mobility transistors, J VAC SCI B, 18(2), 2000, pp. 733-740

Authors: Schremer, AT Smart, JA Wang, Y Ambacher, O MacDonald, NC Shealy, JR

Citation: At. Schremer et al., High electron mobility AlGaN/GaN heterostructure on (111) Si, APPL PHYS L, 76(6), 2000, pp. 736-738

Authors: Smart, JS Schremer, AT Weimann, NG Ambacher, O Eastman, LF Shealy, JR

Citation: Js. Smart et al., AlGaN GaN heterostructures on insulating AlGaN nucleation layers, APPL PHYS L, 75(3), 1999, pp. 388-390

Authors: Smart, JA Chumbes, EM Schremer, AT Shealy, JR

Citation: Ja. Smart et al., Single step process for epitaxial lateral overgrowth of GaN on SiC and sapphire substrates, APPL PHYS L, 75(24), 1999, pp. 3820-3822