Authors:
Kaiser, S
Jakob, M
Zweck, J
Gebhardt, W
Ambacher, O
Dimitrov, R
Schremer, AT
Smart, JA
Shealy, JR
Citation: S. Kaiser et al., Structural properties of AlGaN/GaN heterostructures on Si(111) substrates suitable for high-electron mobility transistors, J VAC SCI B, 18(2), 2000, pp. 733-740
Authors:
Smart, JA
Chumbes, EM
Schremer, AT
Shealy, JR
Citation: Ja. Smart et al., Single step process for epitaxial lateral overgrowth of GaN on SiC and sapphire substrates, APPL PHYS L, 75(24), 1999, pp. 3820-3822