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Results: 1-5 |
Results: 5
Reaction layer dynamics in ion-assisted Si/XeF2 etching: Temperature dependence
Authors: Sebel, PGM Hermans, LJF Beijerinck, HCW
Citation: Pgm. Sebel et al., Reaction layer dynamics in ion-assisted Si/XeF2 etching: Temperature dependence, J VAC SCI A, 18(6), 2000, pp. 2759-2769
Etching of Si through a thick condensed XeF2 layer
Authors: Sebel, PGM Hermans, LJF Beijerinck, HCW
Citation: Pgm. Sebel et al., Etching of Si through a thick condensed XeF2 layer, J VAC SCI A, 18(5), 2000, pp. 2090-2097
Reaction layer dynamics in ion-assisted Si/XeF2 etching: Ion flux dependence
Authors: Sebel, PGM Hermans, LJF Beijerinck, HCW
Citation: Pgm. Sebel et al., Reaction layer dynamics in ion-assisted Si/XeF2 etching: Ion flux dependence, J VAC SCI A, 17(6), 1999, pp. 3368-3378
Silicon etch rate enhancement by traces of metal
Authors: Sebel, PGM Hermans, LJF Beijerinck, HCW
Citation: Pgm. Sebel et al., Silicon etch rate enhancement by traces of metal, J VAC SCI A, 17(3), 1999, pp. 755-762
Study of the SiO2-to-Si3N4 etch selectivity mechanism in inductively coupled fluorocarbon plasmas and a comparison with the SiO2-to-Si mechanism
Authors: Schaepkens, M Standaert, TEFM Rueger, NR Sebel, PGM Oehrlein, GS Cook, JM
Citation: M. Schaepkens et al., Study of the SiO2-to-Si3N4 etch selectivity mechanism in inductively coupled fluorocarbon plasmas and a comparison with the SiO2-to-Si mechanism, J VAC SCI A, 17(1), 1999, pp. 26-37
Risultati: 1-5 |