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Results: 1-13 |
Results: 13
Comparison of silicon epitaxial growth on the 200-and 300-mm wafers from trichlorosilane in Centura reactors
Authors: Segal, AS Galyukov, AO Kondratyev, AV Sid'ko, AP Karpov, SY Makarov, YN Siebert, W Storck, P
Citation: As. Segal et al., Comparison of silicon epitaxial growth on the 200-and 300-mm wafers from trichlorosilane in Centura reactors, MICROEL ENG, 56(1-2), 2001, pp. 93-98
Application of pressure steps to mechanosensitive channels in membrane patches: a simple, economical, and fast system
Authors: Hurwitz, CG Segal, AS
Citation: Cg. Hurwitz et As. Segal, Application of pressure steps to mechanosensitive channels in membrane patches: a simple, economical, and fast system, PFLUG ARCH, 442(1), 2001, pp. 150-156
Quasi-thermodynamic model of SiGe epitaxial growth
Authors: Segal, AS Karpov, SY Sid'ko, AP Makarov, YN
Citation: As. Segal et al., Quasi-thermodynamic model of SiGe epitaxial growth, J CRYST GR, 225(2-4), 2001, pp. 268-273
Diagnosis of tonicity disorders
Authors: Segal, AS
Citation: As. Segal, Diagnosis of tonicity disorders, CLIN G MED, 2001, pp. 191-215
Treatment of hypertonicity and hypotonicity
Authors: Segal, AS
Citation: As. Segal, Treatment of hypertonicity and hypotonicity, CLIN G MED, 2001, pp. 535-548
KCNA10: a novel ion channel functionally related to both voltage-gated potassium and CNG cation channels
Authors: Lang, R Lee, G Liu, WM Tian, SL Rafi, H Orias, M Segal, AS Desir, GV
Citation: R. Lang et al., KCNA10: a novel ion channel functionally related to both voltage-gated potassium and CNG cation channels, AM J P-REN, 278(6), 2000, pp. F1013-F1021
On mechanisms of sublimation growth of AlN bulk crystals
Authors: Segal, AS Karpov, SY Makarov, YN Mokhov, EN Roenkov, AD Ramm, MG Vodakov, YA
Citation: As. Segal et al., On mechanisms of sublimation growth of AlN bulk crystals, J CRYST GR, 211(1-4), 2000, pp. 68-72
Growth of silicon carbide by sublimation sandwich method in the atmosphereof inert gas
Authors: Segal, AS Vorob'ev, AN Karpov, SY Mokhov, EN Ramm, MG Ramm, MS Roenkov, AD Vodakov, YA Makarov, YN
Citation: As. Segal et al., Growth of silicon carbide by sublimation sandwich method in the atmosphereof inert gas, J CRYST GR, 208(1-4), 2000, pp. 431-441
Close association of the N terminus of Kv1.3 with the pore region
Authors: Yao, XQ Liu, WM Tian, SL Rafi, H Segal, AS Desir, GV
Citation: Xq. Yao et al., Close association of the N terminus of Kv1.3 with the pore region, J BIOL CHEM, 275(15), 2000, pp. 10859-10863
Transport phenomena in sublimation growth of SiC bulk crystals
Authors: Segal, AS Vorob'ev, AN Karpov, SY Makarov, YN Mokhov, EN Ramm, MG Ramm, MS Roenkov, AD Vodakov, YA Zhmakin, AI
Citation: As. Segal et al., Transport phenomena in sublimation growth of SiC bulk crystals, MAT SCI E B, 61-2, 1999, pp. 40-43
Optimization of sublimation growth of SiC bulk crystals using modeling
Authors: Ramm, MS Mokhov, EN Demina, SE Ramm, MG Roenkov, AD Vodakov, YA Segal, AS Vorob'ev, AN Karpov, SY Kulik, AV Makarov, YN
Citation: Ms. Ramm et al., Optimization of sublimation growth of SiC bulk crystals using modeling, MAT SCI E B, 61-2, 1999, pp. 107-112
Modeling analysis of gas phase nucleation in silicon carbide chemical vapor deposition
Authors: Vorob'ev, AN Komissarov, AE Segal, AS Makarov, YN Karpov, SY Zhmakin, AI Rupp, R
Citation: An. Vorob'Ev et al., Modeling analysis of gas phase nucleation in silicon carbide chemical vapor deposition, MAT SCI E B, 61-2, 1999, pp. 176-178
The T0 domain of rabbit Kv1.3 regulates steady state channel protein level
Authors: Segal, AS Yao, XQ Desir, GV
Citation: As. Segal et al., The T0 domain of rabbit Kv1.3 regulates steady state channel protein level, BIOC BIOP R, 254(1), 1999, pp. 54-64
Risultati: 1-13 |